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IRL3103D1 - Brand New IR Field Effect Tube (MOSFET) - Datasheet - Chipdatas

IRL3103D1 - Brand New IR Field Effect Tube (MOSFET)

In Stock:168 ,Ready for Immediate Shipping
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In Stock: 168, Ready for Immediate Shipping
Brand:IR
Chipdatas Part No.:CD93-IRL3103D1
Manufacturer Part No.:IRL3103D1
Datecode:09+
Package:TO-220-3
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  • Description:

    The IRL3103D1 is a field-effect tube (MOSFET) model designed for switching regulator applications. It belongs to the FETKY family of copackaged HEXFET power MOSFETs and Schottky Diodes, providing an innovative solution for board space saving. This model features a low on resistance Gen 5 MOSFET with a low forward voltage drop Schottky diode, resulting in maximized converter efficiencies. The TO-220 package, with its low thermal resistance and cost, is widely accepted in commercial-industrial applications at power dissipation levels up to 50 watts.

    Specifications and Features:

    • Copackaged HEXFET® Power MOSFET and Schottky Diode
    • Generation 5 Technology
    • Logic Level Gate Drive
    • Minimize Circuit Inductance
    • Ideal For Synchronous Regulator Application

    Application Scenarios:

    The IRL3103D1 is suitable for various applications, including but not limited to:

    • Switching regulator designs
    • Power converter circuits
    • Synchronous regulator applications

    Comparison:

    Advantages:
    • Compact copackaged design saves board space
    • Low on resistance Gen 5 MOSFET for efficient performance
    • Low forward voltage drop Schottky diode
    Disadvantages:
    • May not be suitable for high power dissipation applications beyond 50 watts
    • TO-220 package may not be the best option for all industry-specific requirements
  • Similar parts: 25937 , Click to view
    Attributes Value
    Category Field Effect Tube (MOSFET)
    Manufacturer Infineon Technologies
    Product Category FETs - Single
    Categories Transistors - FETs, MOSFETs - Single
    Series FETKY?
    Packaging Tube
    Part-Status Obsolete
    FET-Type N-Channel
    Technology MOSFET (Metal Oxide)
    Drain-to-Source-Voltage-Vdss 30V
    Current-Continuous-Drain-Id-25°C 64A (Tc)
    Drive-Voltage-Max-Rds-On-Min-Rds-On 4.5V, 10V
    Vgs-th-Max-Id 1V @ 250?A
    Gate-Charge-Qg-Max-Vgs 43nC @ 4.5V
    Vgs-Max ±16V
    Input-Capacitance-Ciss-Max-Vds 1900pF @ 25V
    FET-Feature -
    Power-Dissipation-Max 2W (Ta), 89W (Tc)
    Rds-On-Max-Id-Vgs 14 mOhm @ 34A, 10V
    Operating-Temperature -55°C ~ 150°C (TJ)
    Mounting-Type Through Hole
    Supplier-Device-Package TO-220AB
    Package-Case TO-220-3
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  • Shopping guide

    Warranty:
    • - 30-day money-back return policy,
    • - 90-day warranty against any manufacturing defects. View more
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Additional Information
  • Datasheet: Download IRL3103D1
  • Chipdatas Part: CD93-IRL3103D1
  • Warehouse: China, Hong Kong
  • Dispatch: Within 24 hours
  • Free Shipping: Yes
  • Prority Shipping: Yes, 3-5 days
  • Last Updated: 2024/06/13 01:26 +0800
Refund
    • Full Refund if you don't receive your order
    • Full or Partial Refund , If the item is not as described
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