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STD9NM50N - Brand New STMicroelectronics Field Effect Tube (MOSFET) - Datasheet - Chipdatas

STD9NM50N - Brand New STMicroelectronics Field Effect Tube (MOSFET)

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In Stock: 2782, Ready for Immediate Shipping
Chipdatas Part No.:CD86-STD9NM50N
Manufacturer Part No.:STD9NM50N
Datecode:09+
Package:TO-252-3, DPak 2 Leads + Tab, SC-63
$0.56502 /PCS Each contains 0 PCS
≥1:
$0.56502
≥10:
$0.55936
≥50:
$0.55371
≥100:
$0.53676
Numbers (PCS) :
  • Description

    The STD9NM50N is a Mosfet field-effect transistor. It is a high voltage N-channel power MOSFET, suitable for use in various applications such as DC-DC converters, power supplies, motor controls, and lighting systems. This transistor is designed to offer low on-state resistance, fast switching speed, and excellent thermal performance.

    Specifications and features

    Features Specifications
    Product Category Field Effect Tube (MOSFET)
    Transistor Type N-Channel
    Voltage Rating 500V
    Current Rating 9A
    Packaging Type Tube

    Application Scenarios

    This transistor is ideal for use in various applications that require the use of high-voltage, high-current devices. It is commonly used in DC-DC converters, power supplies, motor controls, and lighting systems. Because of its fast switching speed and low on-state resistance, it is highly suitable for use in switching power supplies and other applications where efficiency is a key factor.

    Comparison

    Advantages
    • Low on-state resistance
    • Fast switching speed
    • Excellent thermal performance
    Disadvantages
    • May not be suitable for low voltage applications
    • Relatively expensive than standard FET devices
    • May require additional heat sinking
  • Similar parts: 25937 , Click to view
    Attributes Value
    Category Field Effect Tube (MOSFET)
    Manufacturer STMicroelectronics
    Product Category FETs - Single
    Series N-channel MDmesh
    Packaging Reel
    Unit-Weight 0.139332 oz
    Mounting-Style SMD/SMT
    Package-Case TO-252-3
    Technology Si
    Number-of-Channels 1 Channel
    Configuration Single
    Transistor-Type 1 N-Channel
    Pd-Power-Dissipation 70 W
    Maximum Operating Temperature + 150 C
    Operating temperature range - 55 C
    Fall-Time 19 ns
    Rise-Time 16 ns
    Vgs-Gate-Source-Voltage 25 V
    ID (drain current) 7.5 A
    Vds-Drain-Source-Breakdown-Voltage 500 V
    Vgs-th-Gate-Source-Threshold-Voltage 3 V
    Rds-On-Drain-Source-Resistance 560 mOhms
    Transistor-Polarity N-Channel
    Typical-Turn-Off-Delay-Time 45 ns
    Turn-On Delay Time 11 ns
    Qg-Gate-Charge 14 nC
    Channel-Mode Enhancement
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  • Shopping guide

    Warranty:
    • - 30-day money-back return policy,
    • - 90-day warranty against any manufacturing defects. View more
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    • - EMS: 10-15 business days
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Additional Information
  • Datasheet: Download STD9NM50N
  • Chipdatas Part: CD86-STD9NM50N
  • Warehouse: China, Hong Kong
  • Dispatch: Within 24 hours
  • Free Shipping: Yes
  • Prority Shipping: Yes, 3-5 days
  • Last Updated: 2024/06/13 17:09 +0800
Refund
    • Full Refund if you don't receive your order
    • Full or Partial Refund , If the item is not as described
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