PCF8582C-2T/03，118 - Brand New NXP Semiconductors Memory
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Description
The PCF8582C-2T/03,118 is a floating gate Electrically Erasable Programmable Read Only Memory (EEPROM) with 2 kbits (256×8-bit) non-volatile storage. It utilizes an internal redundant storage code, making it fault tolerant to single bit errors and significantly increasing reliability compared to conventional EEPROMs. It also features low power consumption due to its full CMOS technology. The programming voltage is generated on-chip using a voltage multiplier.
Specifications and features
- Low power CMOS design with a maximum operating current of 2.0 mA and a maximum standby current of 10µA (at 6.0 V), typical 4µA
- Non-volatile storage of 2 kbits organized as 256×8-bit
- Single supply with full operation down to 2.5 V
- On-chip voltage multiplier
- Serial input/output I2C-bus
- Write operations: byte write mode, 8-byte page write mode (minimizes total write time per byte)
- Read operations: sequential read, random read
- Internal timer for writing (no external components required)
- Internal power-on reset
- 0 kHz to 100 kHz clock frequency
- High reliability achieved by using a redundant storage code
- Endurance: 1,000,000 Erase/Write (E/W) cycles at Tamb=22°C
- 10 years non-volatile data retention time
- Pin and address compatible with PCF8570, PCF8571, PCF8572, PCA8581, and PCF85102
- Pin compatible with a different address to PCF85103
- ESD protection exceeds 2000 V HBM per JESD22-A114, 150 V MM per JESD22-A115, and 1000 V CDM per JESD22-C101
- Latch-up testing is done to JEDEC Standard JESD78, which exceeds 100 mA
- Offered in DIP8 and SO8 packages
Application Scenarios
The PCF8582C-2T/03,118 is commonly used in electronic devices that require non-volatile memory storage, such as embedded systems, IoT devices, industrial control systems, and consumer electronics.
Comparison
Advantages- Fault tolerant to single bit errors, increasing reliability
- Low power consumption
- On-chip voltage multiplier for generating programming voltage
- High endurance with 1,000,000 Erase/Write (E/W) cycles
- Long non-volatile data retention time of 10 years
Disadvantages- Limited storage capacity of 2 kbits
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Similar parts: 9920 , Click to view
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Datasheet
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Popular parts of the same kind
- Datasheet: Download PCF8582C-2T/03，118
- Chipdatas Part: CD94-PCF8582C-2T/03，118
- Warehouse: China, Hong Kong
- Dispatch: Within 24 hours
- Free Shipping: Yes
- Prority Shipping: Yes, 3-5 days
- Last Updated: 2024/06/13 07:03 +0800
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