Description

This article introduces the CY7C1312BV18-167BZXC electrical component model, which belongs to the IC chips product category and features the QDR™-II architecture equipped with a 1.8V Synchronous Pipelined SRAM that has two separate ports to access the memory array. The Read port has dedicated Data Outputs to support Read operations, and the Write Port has dedicated Data Inputs to support Write operations.

Specifications and features

• Separate Independent Read and Write Data Ports
• Supports concurrent transactions
• 167-MHz Clock for High Bandwidth
• Two-word Burst on all accesses
• Double Data Rate (DDR) interfaces on both Read & Write Ports (data transferred at 333 MHz) @ 167MHz
• Two input clocks (K and K) for precise DDR timing
• SRAM uses rising edges only
• Two output clocks (C and C) accounts for clock skew and flight time mismatches
• Echo clocks (CQ and CQ) simplify data capture in high-speed systems
• Single multiplexed address input bus latches address inputs for both Read and Write ports
• Synchronous internally self-timed writes
• Available in x8, x18, and x36 configurations
• 1.8V core power supply with HSTL Inputs and Outputs
• 13x15 mm 1.0-mm pitch FBGA package, 165 ball (11x15 matrix)
• Variable drive HSTL output buffers
• Extended HSTL output voltage (1.4V–VDD)
• JTAG Interface
• On-chip Delay Lock Loop (DLL)

Application Scenarios

This component model can be used in various electronics products that require high-speed data transfer, such as network switches, routers, and high-speed signal processing systems.

Comparison

• High-speed data transfer rate due to the QDRTM-II architecture with separate read and write ports
• DDR interfaces on both read & write ports result in efficient data transfer
• Extended HSTL output voltage range allows for greater flexibility in voltage options

• The component model is available in 1.8V core power supply only
• The package is relatively large, which may be inconvenient for some applications