Description

This is a family of 4,194,304 x 1bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage (+5V or +3.3V), access time (-5, -6 or -7), power consumption(Normal or Low power), and package type (SOJ or TSOP-II) are optional features of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, self-refresh operation is available in Low power version. This 4Mx1 Fast Page Mode DRAM family is fabricated using Samsung's advanced CMOS process to realize high bandwidth, low power consumption, and high reliability. It may be used as the main memory for mainframes and mini computers, personal computers, and high-performance microprocessor systems.

Specifications and features

• Part Identification
- KM41C4000D/D-L(5V, 1K Ref.)
- KM41V4000D/D-L(3.3V, 1K Ref.)
• Active Power Dissipation
• Refresh Cycles
• Performance Range
• Fast Page Mode operation
• CAS-before-RAS refresh capability
• RAS-only and Hidden refresh capability
• Self-refresh capability (3.3V, L-ver only)
• Fast parallel test mode capability
• TTL(5V)/LVTTL(3.3V) compatible inputs and outputs
• Common I/O using early write
• JEDEC Standard pinout
• Available in 26(20)-pin SOJ 300mil and TSOP(II) 300mil packages
• +5V±10% power supply(5V product)
• +3.3V±0.3V power supply(3.3V product)

Application Scenarios

This electronic component is commonly used as the main memory for mainframes, mini computers, personal computers, and high-performance microprocessor systems.

Comparison