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Description
The MBM29DL323TE90TN is a 32M-bit, 3.0 V-only Flash memory that is designed to be programmed in-system with the standard system 3.0 V VCC supply. It does not require 12.0 V VPP and 5.0 V VCC for write or erase operations. This device can also be reprogrammed in standard EPROM programmers.
Specifications and features
- 0.23 µm Process Technology
- Simultaneous Read/Write operations (dual bank)
- Multiple devices available with different bank sizes
- Zero latency between read and write operations
- Single 3.0 V read, program, and erase
- Compatible with JEDEC-standard commands
- Compatible with JEDEC-standard world-wide pinouts
- Minimum 100,000 program/erase cycles
- High performance with 80 ns maximum access time
- Sector erase architecture with different sector sizes
- Boot Code Sector Architecture with hidden ROM region
- WP/ACC input pin for boot sector protection and increased program performance
- Embedded EraseTM Algorithms for automatic pre-programming and erasing
- Embedded ProgramTM Algorithms for automatic writing and verification
- Data Polling and Toggle Bit feature for detection of program or erase cycle completion
- Ready/Busy output (RY/BY) for hardware method detection of program or erase cycle completion
- Automatic sleep mode for low power consumption
- Low VCC write inhibit ≤ 2.5 V
- Erase Suspend/Resume for suspending erase operation
- Sector group protection and temporary sector group unprotection
- Fast Programming Function by Extended Command
- In accordance with CFI (Common Flash Memory Interface)
Application Scenarios
The MBM29DL323TE90TN is suitable for applications that require a 32M-bit, 3.0 V-only Flash memory with high performance, sector erase architecture, and compatibility with JEDEC-standard commands and pinouts. It can be used in various electronic devices such as microcontrollers, digital cameras, and networking equipment.
Comparison
Advantages- Simultaneous Read/Write operations allow for faster data transfer.
- Single 3.0 V read, program, and erase minimizes power requirements.
- Compatibility with JEDEC-standard commands and pinouts ensures easy integration.
- High performance with 80 ns maximum access time provides faster data access.
- Sector erase architecture allows for selective erasure and enhances data management.
Disadvantages- Minimum 100,000 program/erase cycles may limit the lifespan of the memory.
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Datasheet
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Shopping guide
Delivery period:
- - Will ship out in 2-3 days
- - DHL Express: 3-7 business days
- - DHL eCommerce: 12-22 business days
- - FedEx International Priority: 3-7 business days
- - EMS: 10-15 business days
Shipping fee:
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Shipping option:
DHL, FedEx, EMS, SF Express, and Registered Air MailShipping tracking:
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How to Buy:
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Payment:
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Popular parts of the same kind
- Datasheet: Download MBM29DL323TE90TN
- Chipdatas Part: CD86-MBM29DL323TE90TN
- Warehouse: China, Hong Kong
- Dispatch: Within 24 hours
- Free Shipping: Yes
- Prority Shipping: Yes, 3-5 days
- Last Updated: 2024/10/01 20:11 +0800
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- Full Refund if you don't receive your order
- Full or Partial Refund , If the item is not as described
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The fee is charged according to the rule of PayPal.
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Western Union charge US$0.00 banking fee.
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