Description

Electronic Component Model: IRF7351

Product Category: Transistors (BJT) - Arrays

These dual N and P channel HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in DC motor drives and load management applications.

The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques.

Specifications and features

• Ultra Low On-Resistance
• Dual N and P Channel MOSFET
• Surface Mount
• Available in Tape and Reel

Application Scenarios

These dual N and P channel HEXFET® power MOSFETs are suitable for use in DC motor drives and load management applications. Additionally, the modified SO-8 package with enhanced thermal characteristics makes it ideal for a variety of power applications where multiple devices can be used in an application with reduced board space.

Comparison

• Extremely low on-resistance per silicon area
• Fast switching speed
• Ruggedized device design
• Enhanced thermal characteristics in the modified SO-8 package
• Multiple-die capability
• Reduced board space
• Suitable for use in DC motor drives and load management applications
• Vapor phase, infra red, or wave soldering techniques for package design

Currently, there is no available information on the specific disadvantages of the IRF7351 electronic component model.