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PSMN8R7-80PS - Brand New NXP Semiconductors Field Effect Tube (MOSFET) - Datasheet - Chipdatas

PSMN8R7-80PS - Brand New NXP Semiconductors Field Effect Tube (MOSFET)

In Stock:4060 ,Ready for Immediate Shipping
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In Stock: 4060, Ready for Immediate Shipping
Chipdatas Part No.:CD86-PSMN8R7-80PS
Manufacturer Part No.:PSMN8R7-80PS
Datecode:09+
Package:TO-220-3
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  • Description

    PSMN8R7-80PS is a high performance N-channel, logic-level MOSFET in LFPAK, designed for high efficiency, reliability, and optimized switching performance under light and heavy load conditions. Its unique features make it the perfect solution for power switching applications, DC-DC conversion, voltage regulator modules (VRM), and power OR-ing. It offers superior 'Safe Operating Area' performance, high efficiency, and the industry's lowest RDS (on) Power-SO8 - less than 1 mΩ at 25 V and 30 V. It also provides low Qgd for reduced switching losses and high frequency switching, low Qoss for reduced output losses between DRAIN & SOURCE, optimized for 4.5 V gate drive voltage, and industry-leading gate charge characteristics. Its LFPAK package facilitates compatibility with other vendor Power-SO8 types and eliminates costly X-ray inspection, as its solder joints can be optically inspected.

    Specifications and features

    • Product Name: PSMN8R7-80PS
    • Product Category: Field Effect Tube (MOSFET)
    • MOSFET Polarity: N-Channel
    • Continuous Drain Current: 80 A
    • Drain-Source Voltage (Vdss): 30 V
    • Gate-Source Voltage (Vgs): ±20 V
    • Drain-Source On Resistance (Rds On): 0.8 mOhms
    • Configuration: Single

    Application Scenarios

    Some of the key applications of PSMN8R7-80PS include Synchronous buck regulators, DC-DC conversion, voltage regulator modules (VRM), and power OR-ing.

    Comparison

    Advantages
    • Offers superior 'Safe Operating Area' performance compared to other Trench MOSFET vendors
    • Industry's lowest RDS (on) Power-SO8-less than 1 mΩ at 25 V and 30 V
    • Provides low Qgd for reduced switching losses and high frequency switching
    • Optimized for 4.5 V gate drive voltage, resulting in optimal switching performance under light and heavy load conditions
    • LFPAK package facilitates compatibility with other vendor Power-SO8 types and eliminates costly X-ray inspection, as its solder joints can be optically inspected
    Disadvantages

    No significant disadvantages have been noted with the PSMN8R7-80PS MOSFET. However, it is important to be mindful of the design requirements and ensure that the component's specifications align with the design considerations.

  • Similar parts: 25937 , Click to view
    Attributes Value
    Category Field Effect Tube (MOSFET)
    Manufacturer NXP Semiconductors
    Product Category FETs - Single
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Additional Information
  • Datasheet: Download PSMN8R7-80PS
  • Chipdatas Part: CD86-PSMN8R7-80PS
  • Warehouse: China, Hong Kong
  • Dispatch: Within 24 hours
  • Free Shipping: Yes
  • Prority Shipping: Yes, 3-5 days
  • Last Updated: 2024/06/13 07:26 +0800
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    • Full Refund if you don't receive your order
    • Full or Partial Refund , If the item is not as described
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