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Description
The PTB20146-A is a class A, NPN, common emitter RF power transistor designed for 26 Vdc operation in the frequency range of 1.8 to 2.0 GHz. With a minimum output power of 0.4 watt, it is suitable for both continuous wave (CW) and peak envelope power (PEP) applications. This transistor is made using ion implantation, nitride surface passivation, and gold metallization techniques to ensure excellent device reliability. It also offers 100% lot traceability as a standard feature.
Specifications and features
- Power Output: 0.4 Watt
- Frequency Range: 1.8 to 2.0 GHz
- Class: A
- Solderability Standards: IEC-68-2-54, ANSI/J Std-002-A
- Metallization: Gold
- Passivation: Silicon Nitride
- Mounting: Surface Mountable
- Packaging: Available in Tape and Reel
Application Scenarios
The PTB20146-A transistor can be used in a variety of applications, including:
- RF power amplifiers
- Wireless communication systems
- Signal processing equipment
- Satellite communication systems
Comparison
Advantages- High reliability due to ion implantation, nitride surface passivation, and gold metallization
- Lot traceability for quality control
- Wide frequency range for flexibility in different applications
Disadvantages- Limited power output of 0.4 Watt
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Similar parts: 430483 , Click to view
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Datasheet
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Shopping guide
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Popular parts of the same kind
- Datasheet: Download PTB20146-A
- Chipdatas Part: CD89-PTB20146-A
- Warehouse: China, Hong Kong
- Dispatch: Within 24 hours
- Free Shipping: Yes
- Prority Shipping: Yes, 3-5 days
- Last Updated: 2024/10/01 13:57 +0800
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