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2N6661 - Brand New Microchip Technology Field Effect Tube (MOSFET) - Datasheet - Chipdatas

2N6661 - Brand New Microchip Technology Field Effect Tube (MOSFET)

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In Stock: 2116, Ready for Immediate Shipping
Chipdatas Part No.:CD86-2N6661
Manufacturer Part No.:2N6661
Datecode:09+
Package:TO-205AD, TO-39-3 Metal Can
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  • Description

    The 2N6661 is an enhancement-mode (normally-off) MOSFET transistor that utilizes Supertex’s advanced DMOS technology. It is designed to handle power with high input impedance and positive temperature coefficient. The MOS structure ensures devices free from thermal runaway and thermally-induced secondary breakdown.

    Specifications and features

    • Product category: Field Effect Tube (MOSFET)
    • Technology: Advanced DMOS
    • Input impedance: High
    • Power handling capabilities: Similar to bipolar transistors
    • Drive requirement: Low power
    • Switching speeds: Fast
    • Thermal stability: Excellent
    • Diode: Integral Source-Drain diode
    • Devices type: Complementary N- and P-channel
    • Characteristic: Free from thermal runaway and thermally-induced secondary breakdown

    Application Scenarios

    The 2N6661 MOSFET Transistor has a wide range of applications which include Motor controls, Converters, Amplifiers, Switches, Power supply circuits, Drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.).

    Comparison

    Advantages
    • Free from secondary breakdown
    • Low power drive requirement
    • Ease of paralleling
    • Low CISS and fast switching speeds
    • Excellent thermal stability
    • Has an Integral Source-Drain diode
    • High input impedance and high gain
    • Complementary N- and P-channel devices
    Disadvantages
    • Not identified yet
  • Similar parts: 25937 , Click to view
    Attributes Value
    Category Field Effect Tube (MOSFET)
    Manufacturer Microchip Technology
    Product Category FETs - Single
    Series -
    Packaging Bulk
    Mounting-Style Through Hole
    Package-Case TO-205AD, TO-39-3 Metal Can
    Technology Si
    Operating-Temperature -55°C ~ 150°C (TJ)
    Mounting-Type Through Hole
    Number-of-Channels 1 Channel
    Supplier-Device-Package TO-39
    Configuration Single
    FET-Type MOSFET N-Channel, Metal Oxide
    Power-Max 6.25W
    Transistor-Type 1 N-Channel
    VDSS – Drain-Source Voltage 90V
    Input Capacitance 50pF @ 24V
    FET-Feature Standard
    Current-Continuous-Drain-Id-25°C 350mA (Tj)
    Rds-On-Max-Id-Vgs 4 Ohm @ 1A, 10V
    Vgs-th-Max-Id 2V @ 1mA
    Gate-Charge-Qg-Vgs -
    Pd-Power-Dissipation 6.25 W
    Maximum Operating Temperature + 150 C
    Operating temperature range - 55 C
    Vgs-Gate-Source-Voltage 20 V
    ID (drain current) 1.5 A
    Vds-Drain-Source-Breakdown-Voltage 90 V
    Rds-On-Drain-Source-Resistance 4 Ohms
    Transistor-Polarity N-Channel
    Channel-Mode Enhancement
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  • Shopping guide

    Warranty:
    • - 30-day money-back return policy,
    • - 90-day warranty against any manufacturing defects. View more
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Contact us
Additional Information
  • Datasheet: Download 2N6661
  • Chipdatas Part: CD86-2N6661
  • Warehouse: China, Hong Kong
  • Dispatch: Within 24 hours
  • Free Shipping: Yes
  • Prority Shipping: Yes, 3-5 days
  • Last Updated: 2024/06/13 01:50 +0800
Refund
    • Full Refund if you don't receive your order
    • Full or Partial Refund , If the item is not as described
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