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Description
SA25C512LEF is a 512Kb CMOS non-volatile serial EEPROM, organized as a 64K x 8-bit memory. It is available in a space-saving, 8-lead narrow SOIC package. The SA25C512LEF is available in a wide range of voltages - 2.7-3.6 V and 4.5-5.5 V. It features Saifun NROM™ Flash Cell, Serial Peripheral Interface (SPI) compatibility, and supports SPI Modes 0 (0,0) and 3 (1,1). It has byte and page write modes (up to 128 bytes) and a single supply voltage of 2.7V to 3.6V (L) or 4.5V to 5.5V (H). The SA25C512LEF has a clock rate of up to 10MHz and supports block write protection. It also has self-timed write cycles, with a maximum of 10ms, and a minimum of 100,000 write cycles and 20 years of data retention. It has a low-power standby current of less than 1µA and comes in an 8-SOIC narrow package. The SA25C512LEF is available in both industrial (-40°C to +85°C) and commercial (0°C to +70°C) temperature ranges.
Specifications and features
- 512Kb CMOS non-volatile serial EEPROM
- 64K x 8-bit memory
- Available in a space-saving, 8-lead narrow SOIC package
- Wide range of voltages - 2.7-3.6V and 4.5-5.5V
- Saifun NROM™ Flash Cell
- Serial Peripheral Interface (SPI) compatibility
- Supports SPI Modes 0 (0,0) and 3 (1,1)
- Byte and Page Write Modes (up to 128 bytes)
- Single Supply Voltage: 2.7V to 3.6V (L), 4.5V to 5.5V (H)
- 10MHz Clock Rate
- Block Write Protection: Protect ¼, ½, or Entire Array
- Write Protect Pin and Write Disable Instructions of both Hardware and Software Data Protection
- Self-timed Write Cycle (10mS max)
- 100,000 Write Cycles (Minimum)
- 20 Year Data Retention
- Low-power Standby Current (less than 1µA)
- 8-SOIC Narrow Package (0.150” Wide Body, JEDEC SOIC)
- Temperature Range: Industrial (-40°C to +85°C), Commercial (0°C to +70°C)
Application Scenarios
The SA25C512LEF can be used in various electronic devices that require non-volatile memory storage. It is suitable for applications in industries that require reliable data retention and low-power consumption. Some common application scenarios include:
- Consumer electronics
- Industrial automation
- Medical devices
- Internet of Things (IoT) devices
Comparison
Advantages- High data retention of 20 years
- Wide range of voltage options
- Low-power standby current
- Supports block write protection
- Durable with a minimum of 100,000 write cycles
Disadvantages- Limited memory capacity of 512Kb
- Requires a specific programming interface
- Not suitable for applications requiring high-speed data transfer
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Datasheet
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- Datasheet: Download SA25C512LEF
- Chipdatas Part: CD94-SA25C512LEF
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- Last Updated: 2024/09/28 17:30 +0800
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