R1LV0816ASB-5SI#B0 - Brand New RENESAS Memory
In Stock:200000 ,Ready for Immediate Shipping
New
RoSH Lead free
In Stock:
200000,
Ready for Immediate Shipping
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Description
The R1LV0816ASB-5SI#B0 is a member of the R1LV0108E series, which is a family of low voltage 1-Mbit static RAMs organized as 131,072-word by 8-bit and fabricated by Renesas’s high-performance 0.15um CMOS and TFT technologies. This series has achieved higher density, higher performance, and low power consumption, making it suitable for memory applications where simple interfacing, battery operation, and battery backup are essential.
Specifications and features
- Product category: Memory
- Power supply: Single 2.7~3.6V
- Stand-by current: 1µA (3.0V, typical)
- Clocks: No clocks
- Refresh: No refresh
- Compatibility: All inputs and outputs are TTL compatible
- Memory expansion: Easy memory expansion by CS1# and CS2
- Data I/O: Common Data I/O
- Three-state outputs: OR-tie Capability
- Data contention: OE# prevents data contention on the I/O bus
Application Scenarios
The R1LV0816ASB-5SI#B0 is suitable for use in memory applications where simple interfacing, battery operation, and battery backup are essential design objectives.
Comparison
Advantages- Low power consumption
- Easy memory expansion
- Common Data I/O
- Three-state outputs
Disadvantages- Limited to memory applications where a simple interfacing, battery operating and battery backup are important design objectives
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Similar parts: 9920 , Click to view
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Datasheet
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Shopping guide
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Additional Information
- Datasheet: Download R1LV0816ASB-5SI#B0
- Chipdatas Part: CD91-R1LV0816ASB-5SI#B0
- Warehouse: China, Hong Kong
- Dispatch: Within 24 hours
- Free Shipping: Yes
- Prority Shipping: Yes, 3-5 days
- Last Updated: 2024/06/30 20:06 +0800
Refund
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- Full Refund if you don't receive your order
- Full or Partial Refund , If the item is not as described
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