FQI7P06TU - Brand New Fairchild Semiconductor Field Effect Tube (MOSFET)
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Description
The FQI7P06TU is a P-Channel MOSFET transistor, categorized as a Field Effect Tube and produced using Fairchild's planar stripe DMOS technology. It is designed to minimize on-state resistance, provide excellent switching performance and withstand high energy pulses in the avalanche and commutation modes. The transistor works well for use in low-voltage applications typical in the automotive and DC/DC converters industry, as well as in high-efficiency switching for power management in portable and battery-operated products.
Specifications and Features
Key specifications and features of the FQI7P06TU MOSFET transistor include:
- Maximum Drain-Source Voltage(Vdss) of -60V
- Maximum Continuous Drain Current(Id) of -7A
- Low gate charge (typical 6.3 nC)
- Low Crss (typical 25 pF)
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability
- Maximum junction temperature rating of 175°C
Application Scenarios
The FQI7P06TU is specifically designed for use in low-voltage applications such as the automotive industry and DC/DC converters. It is also useful in high-efficiency switching for power management in portable and battery-operated products.
Comparison
Advantages- Fast switching
- Low gate charge
- Low Crss
- 100% avalanche tested for improved reliability
- Can withstand high-energy pulses in the avalanche and commutation modes
- Improved dv/dt capability
Disadvantages- Not suitable for use in high-voltage applications
- May not be suitable for use in some industrial applications
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Similar parts: 25937 , Click to view
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Datasheet
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Shopping guide
Delivery period:
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Popular parts of the same kind
- Datasheet: Download FQI7P06TU
- Chipdatas Part: CD86-FQI7P06TU
- Warehouse: China, Hong Kong
- Dispatch: Within 24 hours
- Free Shipping: Yes
- Prority Shipping: Yes, 3-5 days
- Last Updated: 2024/09/30 05:12 +0800
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- Full or Partial Refund , If the item is not as described
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The fee is charged according to the rule of PayPal.
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