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PC28F256P30TF - Brand New Micron Technology Inc. Memory - Datasheet - Chipdatas

PC28F256P30TF - Brand New Micron Technology Inc. Memory

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Category:Memory
Chipdatas Part No.:CD94-PC28F256P30TF
Manufacturer Part No.:PC28F256P30TF
Datecode:09+
Package:BGA
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  • Description

    This document provides information about the Intel StrataFlash® Embedded Memory (P30) device and describes its features, operation, and specifications.

    Specifications and features

    The PC28F256P30TF is a high performance memory component with the following features:

    • 85/88 ns initial access
    • 40 MHz with zero wait states, 20 ns clock-to data output synchronous-burst read mode
    • 25 ns asynchronous-page read mode
    • 4-, 8-, 16-, and continuous-word burst mode
    • Buffered Enhanced Factory Programming (BEFP) at 5 µs/byte (Typ)
    • 1.8 V buffered programming at 7 µs/byte (Typ)
    • Multi-Level Cell Technology: Highest Density at Lowest Cost
    • Asymmetrically-blocked architecture
    • Four 32-KByte parameter blocks: top or bottom configuration
    • 128-KByte main blocks
    • VCC(core) voltage: 1.7 V – 2.0 V
    • VCCQ (I/O) voltage: 1.7 V – 3.6 V
    • Standby current: 55 µA (Typ) for 256-Mbit
    • 4-Word synchronous read current: 13 mA (Typ) at 40 MHz
    • Operating temperature: –40 °C to +85 °C
    • Minimum 100,000 erase cycles per block
    • ETOX™ VIII process technology (130 nm)
    • One-Time Programmable Registers:
      • 64 unique factory device identifier bits
      • 64 user-programmable OTP bits
      • Additional 2048 user-programmable OTP bits
    • Selectable OTP Space in Main Array:
      • 4x32KB parameter blocks + 3x128KB main blocks (top or bottom configuration)
    • Absolute write protection: VPP= VSS
    • Power-transition erase/program lockout
    • Individual zero-latency block locking
    • Individual block lock-down
    • Software:
      • 20 µs (Typ) program suspend
      • 20 µs (Typ) erase suspend
      • Intel® Flash Data Integrator optimized
      • Basic Command Set and Extended Command Set compatible
      • Common Flash Interface capable
    • Density and Packaging:
      • 64/128/256-Mbit densities in 56-Lead TSOP package
      • 64/128/256/512-Mbit densities in 64-Ball Intel®Easy BGA package
      • 64/128/256/512-Mbit and 1-Gbit densities in Intel®QUAD+ SCSP
      • 16-bit wide data bus

    Application Scenarios

    The PC28F256P30TF memory component can be used in various electronic devices and applications that require high-performance memory storage, such as:

    • Smartphones
    • Tablets
    • Laptops
    • Embedded systems
    • Industrial equipment
    • Automotive electronics

    Comparison

    Advantages
    • High performance with fast access and read/write speeds
    • Flexible burst mode options for different data transfer requirements
    • Multi-Level Cell Technology for higher memory density at a lower cost
    • Selectable OTP Space in Main Array for user-programmable registers
    • Wide operating temperature range for versatile usage scenarios
    • Reliable with minimum 100,000 erase cycles per block
    • Secure with one-time programmable registers and write protection features
    • Software optimized for easy integration and compatibility
    • Available in various densities and packages for different application needs
    Disadvantages
    • No specific disadvantages have been identified for the PC28F256P30TF memory component.
  • Similar parts: 9920 , Click to view
    Attributes Value
    Category Memory
    Manufacturer Micron Technology Inc.
    Product Category Memory ICs
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  • Shopping guide

    Warranty:
    • - 30-day money-back return policy,
    • - 90-day warranty against any manufacturing defects. View more
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Additional Information
  • Datasheet: Download PC28F256P30TF
  • Chipdatas Part: CD94-PC28F256P30TF
  • Warehouse: China, Hong Kong
  • Dispatch: Within 24 hours
  • Free Shipping: Yes
  • Prority Shipping: Yes, 3-5 days
  • Last Updated: 2024/06/13 06:21 +0800
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    • Full or Partial Refund , If the item is not as described
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