Description

The SST29LE010-150-4C-EH is a 128K x 8 CMOS page mode EEPROM manufactured with SST's proprietary, high-performance CMOS SuperFlash technology. It features a split gate cell design and thick oxide tunneling injector for better reliability and manufacturability. This EEPROM can be written with a single power supply.

Specifications and features

- Single Voltage Read and Write Operations

- Superior Reliability: Endurance of 100,000 cycles (typical) and data retention of greater than 100 years

- Low Power Consumption: Active current of 20 mA (typical) for 5V and 10 mA (typical) for 3.0/2.7V, and standby current of 10 µA (typical)

- Fast Page-Write Operation: 128 Bytes per Page, 1024 Pages, with a page-write cycle time of 5 ms (typical) and complete memory rewrite time of 5 sec (typical)

- Fast Read Access Time: 90-120 ns for 5.0V-only operation, 150-200 ns for 3.0V-only operation, and 200-250 ns for 2.7V-only operation

- Latched Address and Data, and Automatic Write Timing with internal Vpp generation

- End of Write Detection: Toggle Bit and Data# Polling

- Hardware and Software Data Protection

- TTL I/O Compatibility and JEDEC Standard Byte-wide EEPROM Pinouts

- Available Packages: 32-Pin TSOP (8x20 & 8x14 mm), 32-Lead PLCC, 32 Pin Plastic DIP

Application Scenarios

The SST29LE010-150-4C-EH can be used in various electronic devices and systems that require non-volatile memory, such as embedded systems, automotive electronics, industrial control systems, and consumer electronics.

Comparison

- Superior Reliability and Endurance

- Low Power Consumption

- Fast Page-Write and Read Access Time

- Hardware and Software Data Protection

- JEDEC Standard Byte-wide EEPROM Pinouts

- Limited voltage options (5.0V-only for 29EE010, 3.0V-only for 29LE010, and 2.7V-only for 29VE010)