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FDM3622 - Brand New onsemi Field Effect Tube (MOSFET) - Datasheet - Chipdatas

FDM3622 - Brand New onsemi Field Effect Tube (MOSFET)

In Stock:2696 ,Ready for Immediate Shipping
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In Stock: 2696, Ready for Immediate Shipping
Brand:onsemi
Chipdatas Part No.:CD93-FDM3622
Manufacturer Part No.:FDM3622
Datecode:09+
Package:8-PowerWDFN
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  • General Description

    This N-Channel MOSFET is produced using Fairchild Semiconductors advanced PowerTrench® process that has been especially tailored to minimize the on- state resistance and yet maintain low gate charge for superior switching performance.

    Features

    ■ Max rDS(on) = 60mΩ at VGS = 10V, ID = 4.4A
    ■ Max rDS(on) = 80mΩ at VGS = 6.0V, ID = 3.8A
    ■ Low Miller Charge
    ■ Low QRR Body Diode
    ■ Optimized efficiency at high frequencies
    ■ UIS Capability (Single Pulse and Repetitive Pulse)
    ■ RoHS Compliant

    Applications

    ■ Distributed Power Architectures and VRMs.
    ■ Primary Switch for 24V and 48V Systems
    ■ High Voltage Synchronous Rectifier
    ■ Formerly developmental type 82744

  • Similar parts: 25937 , Click to view
    Attributes Value
    Category Field Effect Tube (MOSFET)
    Manufacturer onsemi
    Product Category FETs - Single
    Series PowerTrench®
    Packaging Alternate Packaging
    Part-Aliases FDM3622_NL
    Unit-Weight 0.007408 oz
    Mounting-Style SMD/SMT
    Package-Case 8-PowerWDFN
    Technology Si
    Operating-Temperature -55°C ~ 150°C (TJ)
    Mounting-Type Surface Mount
    Number-of-Channels 1 Channel
    Supplier-Device-Package 8-MLP (3.3x3.3)
    Configuration Single Quad Drain Triple Source
    FET-Type MOSFET N-Channel, Metal Oxide
    Power-Max 900mW
    Transistor-Type 1 N-Channel
    VDSS – Drain-Source Voltage 100V
    Input Capacitance 1090pF @ 25V
    FET-Feature Standard
    Current-Continuous-Drain-Id-25°C 4.4A (Ta)
    Rds-On-Max-Id-Vgs 60 mOhm @ 4.4A, 10V
    Vgs-th-Max-Id 4V @ 250μA
    Gate-Charge-Qg-Vgs 17nC @ 10V
    Pd-Power-Dissipation 2.1 W
    Maximum Operating Temperature + 150 C
    Operating temperature range - 55 C
    Fall-Time 26 ns
    Rise-Time 25 ns
    Vgs-Gate-Source-Voltage 20 V
    ID (drain current) 4.4 A
    Vds-Drain-Source-Breakdown-Voltage 100 V
    Rds-On-Drain-Source-Resistance 44 mOhms
    Transistor-Polarity N-Channel
    Typical-Turn-Off-Delay-Time 35 ns
    Turn-On Delay Time 11 ns
    Channel-Mode Enhancement
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  • Shopping guide

    Warranty:
    • - 30-day money-back return policy,
    • - 90-day warranty against any manufacturing defects. View more
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Contact us
Additional Information
  • Datasheet: Download FDM3622
  • Chipdatas Part: CD93-FDM3622
  • Warehouse: China, Hong Kong
  • Dispatch: Within 24 hours
  • Free Shipping: Yes
  • Prority Shipping: Yes, 3-5 days
  • Last Updated: 2024/06/03 08:24 +0800
Refund
    • Full Refund if you don't receive your order
    • Full or Partial Refund , If the item is not as described
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