Description

The 7E03LA-2R7N-T is a high speed, low power Electrically Erasable and Programmable Read Only Memory (EEPROM) chip. It operates on a single 5 volt power supply and provides an electrical chip erase function.

Specifications and features

• High speed access time: 45/55/70/90/120 nS (max.)
• Read operating current: 30 mA (typ.)
• Erase/Programming operating current: 1 mA (typ.)
• Standby current: 5 mA (typ.)
• Single 5V power supply
• +14V erase/+12V programming voltage
• Fully static operation
• All inputs and outputs directly TTL/CMOS compatible
• Three-state outputs
• Available packages: 32-pin 600 mil DIP, 450 mil SOP, and PLCC

Application Scenarios

The 7E03LA-2R7N-T EEPROM chip can be used in various electronic devices where high speed access and low power consumption are required. It is suitable for applications such as computer memory, embedded systems, and consumer electronics.

Comparison

• High speed access time allows for fast data retrieval.
• Low power consumption helps to extend the battery life of devices.
• Electric chip erase function provides flexibility for data storage.
• Available in different package options to accommodate different design requirements.

• Specific compatibility requirements with TTL/CMOS may limit its use in certain systems.
• May have limited storage capacity compared to other memory technologies.