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HUF75631SK8 - Brand New Fairchild Semiconductor Field Effect Tube (MOSFET) - Datasheet - Chipdatas

HUF75631SK8 - Brand New Fairchild Semiconductor Field Effect Tube (MOSFET)

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Chipdatas Part No.:CD92-HUF75631SK8
Manufacturer Part No.:HUF75631SK8
Datecode:09+
Package:8-SOIC 0.154", 3.90mm Width
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  • Description

    Electronic Component Model: HUF75631SK8 is a Field Effect Tube (MOSFET) used in electronic circuits. It features ultra-low On-Resistance with a rDS(ON) of 0.039Ω at VGS = 10V. It also provides simulation models for temperature compensation, including PSPICE® and SABER© Electrical Models, as well as Spice and SABER© Thermal Impedance Models. For more information, visit www.Intersil.com. The MOSFET also has a Peak Current vs Pulse Width Curve and a UIS Rating Curve.

    Specifications and features

    - Ultra Low On-Resistance: rDS(ON) = 0.039Ω, VGS = 10V - Simulation Models: Temperature Compensated PSPICE® and SABER© Electrical Models, Spice and SABER© Thermal Impedance Models - Peak Current vs Pulse Width Curve - UIS Rating Curve

    Application Scenarios

    This MOSFET can be used in various electronic circuits and applications that require low On-Resistance and temperature compensation. It is suitable for both general-purpose and specialized electronic designs.

    Comparison

    Advantages
    - Ultra low On-Resistance - Temperature compensated simulation models - Suitable for a wide range of applications
    Disadvantages
    - No specific disadvantages mentioned for this model.
  • Similar parts: 25937 , Click to view
    Attributes Value
    Category Field Effect Tube (MOSFET)
    Manufacturer Fairchild Semiconductor
    Product Category FETs - Single
    Mfr Fairchild Semiconductor
    Series UltraFET®
    Package Bulk
    Product-Status Active
    FET-Type N-Channel
    Technology MOSFET (Metal Oxide)
    Drain-to-Source-Voltage-Vdss 100 V
    Current-Continuous-Drain-Id-25°C 5.5A (Ta)
    Drive-Voltage-Max-Rds-On-Min-Rds-On 10V
    Rds-On-Max-Id-Vgs 39mOhm @ 5.5A 10V
    Vgs-th-Max-Id 4V @ 250µA
    Gate-Charge-Qg-Max-Vgs 79 nC @ 20 V
    Vgs-Max ±20V
    Input-Capacitance-Ciss-Max-Vds 1225 pF @ 25 V
    FET-Feature -
    Power-Dissipation-Max 2.5W (Ta)
    Operating-Temperature -55°C ~ 150°C (TJ)
    Mounting-Type Surface Mount
    Supplier-Device-Package 8-SOIC
    Package-Case 8-SOIC (0.154" 3.90mm Width)
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  • Shopping guide

    Warranty:
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    • - 90-day warranty against any manufacturing defects. View more
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Additional Information
  • Datasheet: Download HUF75631SK8
  • Chipdatas Part: CD92-HUF75631SK8
  • Warehouse: China, Hong Kong
  • Dispatch: Within 24 hours
  • Free Shipping: Yes
  • Prority Shipping: Yes, 3-5 days
  • Last Updated: 2024/06/13 00:30 +0800
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    • Full Refund if you don't receive your order
    • Full or Partial Refund , If the item is not as described
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