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IPD65R660CFD - Brand New Infineon Field Effect Tube (MOSFET) - Datasheet - Chipdatas

IPD65R660CFD - Brand New Infineon Field Effect Tube (MOSFET)

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In Stock: 827, Ready for Immediate Shipping
Brand:Infineon
Chipdatas Part No.:CD93-IPD65R660CFD
Manufacturer Part No.:IPD65R660CFD
Datecode:09+
Package:TO-252
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  • Description

    CoolMOS™ is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. 650V CoolMOS™ CFD series combines the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all benefits of a fast switching SJ MOSFET while offering an extremely fast and robust body diode. This combination of extremely low switching, commutation and conduction losses together with highest robustness make especially resonant switching applications more reliable, more efficient, lighter, and cooler

    Features

    • Ultra-fast body diode
    • Very high commutation ruggedness
    • Extremely low losses due to very low FOM Rdson*Qg and Eoss
    • Easy to use/drive
    ​​​​​​​• Qualified for industrial grade applications according to JEDEC
    (J-STD20 and JESD22)
    • Pb-free plating, Halogen free mold compound

    Applications

    650V CoolMOS™ CFD is especially suitable for resonant switching PWM
    stages for e.g. PC Silverbox, LCD TV, Lighting, Server, Telecom, and Solar.

  • Similar parts: 25937 , Click to view
    Attributes Value
    Category Field Effect Tube (MOSFET)
    Manufacturer INFINEON
    Product Category FETs - Single
    Series CoolMOS CFD2
    Packaging Reel
    Part-Aliases IPD65R660CFDBTMA1 IPD65R660CFDXT SP000745024
    Unit-Weight 0.139332 oz
    Mounting-Style SMD/SMT
    Tradename CoolMOS
    Package-Case TO-252-3
    Technology Si
    Number-of-Channels 1 Channel
    Configuration Single
    Transistor-Type 1 N-Channel
    Pd-Power-Dissipation 63 W
    Fall-Time 10 ns
    Rise-Time 8 ns
    Vgs-Gate-Source-Voltage 30 V
    ID (drain current) 6 A
    Vds-Drain-Source-Breakdown-Voltage 650 V
    Vgs-th-Gate-Source-Threshold-Voltage 4 V
    Rds-On-Drain-Source-Resistance 660 mOhms
    Transistor-Polarity N-Channel
    Qg-Gate-Charge 22 nC
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  • Shopping guide

    Warranty:
    • - 30-day money-back return policy,
    • - 90-day warranty against any manufacturing defects. View more
    Returning:
    Within 30 days from date of shipment. View more

    Delivery period:
    • - Will ship out in 2-3 days
    • - DHL Express: 3-7 business days
    • - DHL eCommerce: 12-22 business days
    • - FedEx International Priority: 3-7 business days
    • - EMS: 10-15 business days
    Shipping fee:
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Additional Information
  • Datasheet: Download IPD65R660CFD
  • Chipdatas Part: CD93-IPD65R660CFD
  • Warehouse: China, Hong Kong
  • Dispatch: Within 24 hours
  • Free Shipping: Yes
  • Prority Shipping: Yes, 3-5 days
  • Last Updated: 2024/06/13 17:50 +0800
Refund
    • Full Refund if you don't receive your order
    • Full or Partial Refund , If the item is not as described
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