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IRFL110PBF - Brand New VISHAY Field Effect Tube (MOSFET) - Datasheet - Chipdatas

IRFL110PBF - Brand New VISHAY Field Effect Tube (MOSFET)

In Stock:41198 ,Ready for Immediate Shipping
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In Stock: 41198, Ready for Immediate Shipping
Brand:VISHAY
Chipdatas Part No.:CD93-IRFL110PBF
Manufacturer Part No.:IRFL110PBF
Datecode:09+
Package:TO-261-4, TO-261AA
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  • Description

    Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance, and cost-effectiveness.

    The SOT-223 package is designed for surface-mount using vapor phase, infrared, or wave soldering techniques. Its unique package design allows for easy automatic pick-and-place as with other SOT or SOIC packages but has the added advantage of improved thermal performance due to an enlarged tab for heatsinking. Power dissipation of greater than 1.25W is possible in a typical surface mount application.

    Specifications and features

    - Third Generation HEXFETs

    - Fast switching

    - Ruggedized device design

    - Low on-resistance

    - Cost-effectiveness

    - SOT-223 package

    - Surface Mount

    - Vapor phase, infrared, or wave soldering techniques

    - Easy automatic pick-and-place

    - Improved thermal performance due to an enlarged tab

    - Power dissipation of greater than 1.25W

    Application Scenarios

    The IRFL110PBF can be used in various applications, including:

    - Electronics projects

    - Power management systems

    - Motor control

    - Industrial automation

    - Lighting systems

    Comparison

    The IRFL110PBF offers several advantages:

    - Fast switching speed

    - Ruggedized design for durability

    - Low on-resistance for efficient operation

    - Cost-effective option for designers

    Advantages

    - Fast switching

    - Ruggedized design

    - Low on-resistance

    - Cost-effective

    Disadvantages

    - Not suitable for high-power applications

  • Similar parts: 25937 , Click to view
    Attributes Value
    Category Field Effect Tube (MOSFET)
    Manufacturer VISHAY
    Product Category FETs - Single
    Packaging Tube
    Unit-Weight 0.008826 oz
    Mounting-Style SMD/SMT
    Package-Case SOT-223-3
    Technology Si
    Number-of-Channels 1 Channel
    Configuration Single Dual Drain
    Transistor-Type 1 N-Channel
    Pd-Power-Dissipation 2 W
    Maximum Operating Temperature + 150 C
    Operating temperature range - 55 C
    Fall-Time 9.4 ns
    Rise-Time 16 ns
    Vgs-Gate-Source-Voltage 20 V
    ID (drain current) 1.5 A
    Vds-Drain-Source-Breakdown-Voltage 100 V
    Rds-On-Drain-Source-Resistance 540 mOhms
    Transistor-Polarity N-Channel
    Typical-Turn-Off-Delay-Time 15 ns
    Turn-On Delay Time 6.9 ns
    Channel-Mode Enhancement
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  • Shopping guide

    Warranty:
    • - 30-day money-back return policy,
    • - 90-day warranty against any manufacturing defects. View more
    Returning:
    Within 30 days from date of shipment. View more

    Delivery period:
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    • - DHL Express: 3-7 business days
    • - DHL eCommerce: 12-22 business days
    • - FedEx International Priority: 3-7 business days
    • - EMS: 10-15 business days
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Additional Information
  • Datasheet: Download IRFL110PBF
  • Chipdatas Part: CD93-IRFL110PBF
  • Warehouse: China, Hong Kong
  • Dispatch: Within 24 hours
  • Free Shipping: Yes
  • Prority Shipping: Yes, 3-5 days
  • Last Updated: 2024/06/03 11:38 +0800
Refund
    • Full Refund if you don't receive your order
    • Full or Partial Refund , If the item is not as described
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