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SIA430DJ-T1-GE3 - Brand New ROHM Field Effect Tube (MOSFET) - Datasheet - Chipdatas

SIA430DJ-T1-GE3 - Brand New ROHM Field Effect Tube (MOSFET)

In Stock:8994 ,Ready for Immediate Shipping
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In Stock: 8994, Ready for Immediate Shipping
Brand:ROHM
Chipdatas Part No.:CD94-SIA430DJ-T1-GE3
Manufacturer Part No.:SIA430DJ-T1-GE3
Datecode:09+
Package:PowerPAK® SC-70-6
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  • Description

    Electronic Component Model: SIA430DJ-T1-GE3 is a Field Effect Tube (MOSFET) that features a Halogen-free design. It is a TrenchFET® Power MOSFET that comes in a New Thermally Enhanced PowerPAK® SC-70 Package, offering a small footprint area.

    Specifications and features

    - Halogen-free

    - TrenchFET® Power MOSFET

    - New Thermally Enhanced PowerPAK® SC-70 Package

    - Small Footprint Area

    Application Scenarios

    - Load Switch

    Comparison

    Advantages

    - Halogen-free design for environmental friendliness

    - TrenchFET® Power MOSFET technology for improved performance

    - New Thermally Enhanced PowerPAK® SC-70 Package for efficient heat dissipation

    - Small footprint area for space-saving installation

    Disadvantages

    - Limited application scenarios, primarily suitable for load switch use

  • Similar parts: 25937 , Click to view
    Attributes Value
    Category Field Effect Tube (MOSFET)
    Manufacturer ROHM
    Product Category FETs - Single
    Series TrenchFET®
    Packaging Alternate Packaging
    Part-Aliases SIA430DJ-GE3
    Mounting-Style SMD/SMT
    Package-Case PowerPAKR SC-70-6
    Technology Si
    Operating-Temperature -55°C ~ 150°C (TJ)
    Mounting-Type Surface Mount
    Number-of-Channels 1 Channel
    Supplier-Device-Package PowerPAKR SC-70-6 Single
    Configuration Single Quad Drain Dual Source
    FET-Type MOSFET N-Channel, Metal Oxide
    Power-Max 19.2W
    Transistor-Type 1 N-Channel
    VDSS – Drain-Source Voltage 20V
    Input Capacitance 800pF @ 10V
    FET-Feature Standard
    Current-Continuous-Drain-Id-25°C 12A (Tc)
    Rds-On-Max-Id-Vgs 13.5 mOhm @ 7A, 10V
    Vgs-th-Max-Id 3V @ 250μA
    Gate-Charge-Qg-Vgs 18nC @ 10V
    Pd-Power-Dissipation 3.5 W
    Maximum Operating Temperature + 150 C
    Operating temperature range - 55 C
    Fall-Time 10 ns 8 ns
    Rise-Time 10 ns 8 ns
    Vgs-Gate-Source-Voltage 20 V
    ID (drain current) 12 A
    Vds-Drain-Source-Breakdown-Voltage 20 V
    Rds-On-Drain-Source-Resistance 13.5 mOhms
    Transistor-Polarity N-Channel
    Typical-Turn-Off-Delay-Time 15 ns 17 ns
    Turn-On Delay Time 16 ns 10 ns
    Channel-Mode Enhancement
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  • Shopping guide

    Warranty:
    • - 30-day money-back return policy,
    • - 90-day warranty against any manufacturing defects. View more
    Returning:
    Within 30 days from date of shipment. View more

    Delivery period:
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    • - FedEx International Priority: 3-7 business days
    • - EMS: 10-15 business days
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Contact us
Additional Information
  • Datasheet: Download SIA430DJ-T1-GE3
  • Chipdatas Part: CD94-SIA430DJ-T1-GE3
  • Warehouse: China, Hong Kong
  • Dispatch: Within 24 hours
  • Free Shipping: Yes
  • Prority Shipping: Yes, 3-5 days
  • Last Updated: 2024/06/30 07:23 +0800
Refund
    • Full Refund if you don't receive your order
    • Full or Partial Refund , If the item is not as described
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