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NDS355N - Brand New Fairchild Semiconductor Field Effect Tube (MOSFET) - Datasheet - Chipdatas

NDS355N - Brand New Fairchild Semiconductor Field Effect Tube (MOSFET)

In Stock:17999 ,Ready for Immediate Shipping
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In Stock: 17999, Ready for Immediate Shipping
Chipdatas Part No.:CD86-NDS355N
Manufacturer Part No.:NDS355N
Datecode:09+
Package:TO-236-3, SC-59, SOT-23-3
$0.31378 /PCS Each contains 0 PCS
≥1:
$0.31378
≥10:
$0.31064
≥50:
$0.30750
≥100:
$0.29809
Numbers (PCS) :
  • Description

    The NDS355N is a N-Channel logic level enhancement mode power field effect transistor (MOSFET) designed for low voltage applications such as portable devices, including notebook computers, portable phones, PCMICA cards, and other battery-powered circuits. The device is produced using Fairchild's proprietary DMOS technology, a high-density process tailored to minimize on-state resistance, and features a compact industry standard SOT-23 surface mount package.

    Specifications and Features

    • Product Category: Field Effect Tube (MOSFET)
    • Max Continuous Drain Current: 1.6A
    • Max Operating Voltage: 30V
    • On-state resistance (RDS(ON)): 0.125W at VGS = 4.5V
    • Package Type: SOT-23
    • Copper lead frame for superior thermal and electrical capabilities

    Application Scenarios

    The NDS355N is typically used in low voltage circuits that require fast switching and low in-line power loss. Some common applications include notebook computers, portable phones, PCMICA cards, and other battery-powered circuits.

    Comparison

    Advantages
    • Low on-state resistance
    • Small and compact size
    • Designed for low voltage applications
    Disadvantages
    • Max operating voltage of 30V
    • Max continuous drain current of 1.6A may not be suitable for high power applications
  • Similar parts: 25937 , Click to view
    Attributes Value
    Category Field Effect Tube (MOSFET)
    Manufacturer Fairchild Semiconductor
    Product Category FETs - Single
    Packaging Reel
    Part-Aliases NDS355N_NL
    Unit-Weight 0.001058 oz
    Mounting-Style SMD/SMT
    Package-Case SSOT-3
    Technology Si
    Number-of-Channels 1 Channel
    Configuration Single
    Transistor-Type 1 N-Channel
    Pd-Power-Dissipation 500 mW
    Maximum Operating Temperature + 150 C
    Operating temperature range - 55 C
    Fall-Time 14 ns
    Rise-Time 14 ns
    Vgs-Gate-Source-Voltage 20 V
    ID (drain current) 1.6 A
    Vds-Drain-Source-Breakdown-Voltage 30 V
    Rds-On-Drain-Source-Resistance 125 mOhms
    Transistor-Polarity N-Channel
    Typical-Turn-Off-Delay-Time 12 ns
    Turn-On Delay Time 15 ns
    Channel-Mode Enhancement
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  • Shopping guide

    Warranty:
    • - 30-day money-back return policy,
    • - 90-day warranty against any manufacturing defects. View more
    Returning:
    Within 30 days from date of shipment. View more

    Delivery period:
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    • - DHL Express: 3-7 business days
    • - DHL eCommerce: 12-22 business days
    • - FedEx International Priority: 3-7 business days
    • - EMS: 10-15 business days
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Contact us
Additional Information
  • Datasheet: Download NDS355N
  • Chipdatas Part: CD86-NDS355N
  • Warehouse: China, Hong Kong
  • Dispatch: Within 24 hours
  • Free Shipping: Yes
  • Prority Shipping: Yes, 3-5 days
  • Last Updated: 2024/06/26 07:54 +0800
Refund
    • Full Refund if you don't receive your order
    • Full or Partial Refund , If the item is not as described
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