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IPB021N06N3G - Brand New VISHAY Field Effect Tube (MOSFET) - Datasheet - Chipdatas

IPB021N06N3G - Brand New VISHAY Field Effect Tube (MOSFET)

In Stock:3560 ,Ready for Immediate Shipping
New RoSH Lead free
In Stock: 3560, Ready for Immediate Shipping
Brand:VISHAY
Chipdatas Part No.:CD93-IPB021N06N3G
Manufacturer Part No.:IPB021N06N3G
Datecode:09+
Package:SOT-263
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  • Description

    Electronic Component Model: IPB021N06N3G is a Field Effect Tube (MOSFET) that belongs to the N-channel, normal level category. It has excellent gate charge x R DS(on) product (FOM), extremely low on-resistance R DS(on), and high current capability. With an operating temperature of 175 °C, it is suitable for various applications. This model features Pb-free lead plating and is RoHS compliant. It is also qualified according to JEDEC1) for the target application and is halogen-free according to IEC61249-2-21.

    Specifications and features

    - Product Category: Field Effect Tube (MOSFET)
    - N-channel, normal level
    - Excellent gate charge x R DS(on) product (FOM)
    - Extremely low on-resistance R DS(on)
    - High current capability
    - 175 °C operating temperature
    - Pb-free lead plating; RoHS compliant
    - Qualified according to JEDEC1) for target application
    - Halogen-free according to IEC61249-2-21

    Application Scenarios

    This electronic component model can be used in various applications that require a Field Effect Tube (MOSFET) with N-channel, normal level characteristics. It is suitable for use in circuits that require high current capability and low on-resistance. With its excellent gate charge x R DS(on) product, it is ideal for applications that require efficient power transmission. The operating temperature of 175 °C allows it to be used in environments with higher temperatures. Additionally, its Pb-free lead plating and RoHS compliance make it a preferred choice for environmentally conscious applications.

    Comparison

    Advantages
    • Excellent gate charge x R DS(on) product (FOM)
    • Extremely low on-resistance R DS(on)
    • High current capability
    • Wide operating temperature range of 175 °C
    Disadvantages
    • May not be suitable for applications that require P-channel MOSFETs
  • Similar parts: 25937 , Click to view
    Attributes Value
    Category Field Effect Tube (MOSFET)
    Manufacturer VISHAY
    Product Category FETs - Single
    Mfr Infineon Technologies
    Series OptiMOS™ 3
    Package Bulk
    Product-Status Active
    FET-Type N-Channel
    Technology MOSFET (Metal Oxide)
    Drain-to-Source-Voltage-Vdss 60 V
    Current-Continuous-Drain-Id-25°C 120A (Tc)
    Drive-Voltage-Max-Rds-On-Min-Rds-On 10V
    Rds-On-Max-Id-Vgs 2.4mOhm @ 100A 10V
    Vgs-th-Max-Id 4V @ 196µA
    Gate-Charge-Qg-Max-Vgs 275 nC @ 10 V
    Vgs-Max ±20V
    Input-Capacitance-Ciss-Max-Vds 23000 pF @ 30 V
    FET-Feature -
    Power-Dissipation-Max 250W (Tc)
    Operating-Temperature -55°C ~ 175°C (TJ)
    Mounting-Type Surface Mount
    Supplier-Device-Package PG-TO263-3
    Package-Case TO-263-3 D²Pak (2 Leads + Tab) TO-263AB
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  • Shopping guide

    Warranty:
    • - 30-day money-back return policy,
    • - 90-day warranty against any manufacturing defects. View more
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Additional Information
  • Datasheet: Download IPB021N06N3G
  • Chipdatas Part: CD93-IPB021N06N3G
  • Warehouse: China, Hong Kong
  • Dispatch: Within 24 hours
  • Free Shipping: Yes
  • Prority Shipping: Yes, 3-5 days
  • Last Updated: 2024/06/13 16:06 +0800
Refund
    • Full Refund if you don't receive your order
    • Full or Partial Refund , If the item is not as described
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