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ND512W3A2SN6 - Brand New Nanya Memory - Datasheet - Chipdatas

ND512W3A2SN6 - Brand New Nanya Memory

In Stock:147 ,Ready for Immediate Shipping
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In Stock: 147, Ready for Immediate Shipping
Brand:Nanya
Category:Memory
Chipdatas Part No.:CD93-ND512W3A2SN6
Manufacturer Part No.:ND512W3A2SN6
Datecode:09+
Package:BGA
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  • Description

    The NAND Flash 528 Byte/ 264 Word Page is a family of non-volatile Flash memories that
    uses the Single Level Cell (SLC) NAND cell technology. It is referred to as the Small Page
    family. The NAND512R3A2C, NAND512R4A2C, NAND512W3A2C, and NAND512W4A2C
    have a density of 512 Mbits and operate with either a 1.8V or 3V voltage supply. The size of
    a Page is either 528 Bytes (512 + 16 spare) or 264 Words (256 + 8 spare) depending on
    whether the device has a x8 or x16 bus width.
    The address lines are multiplexed with the Data Input/Output signals on a multiplexed x8 or
    x16 Input/Output bus. This interface reduces the pin count and makes it possible to migrate
    to other densities without changing the footprint.
    To extend the lifetime of NAND Flash devices it is strongly recommended to implement an
    Error Correction Code (ECC). The use of ECC correction allows to achieve up to 100,000
    program/erase cycles for each block. A Write Protect pin is available to give a hardware
    protection against program and erase operations.

    Features

    ● High density NAND Flash memories
    – 512 Mbit memory array
    – Cost effective solutions for mass storage applications
    ● NAND interface
    – x 8 or x 16 bus width
    – Multiplexed Address/ Data
    ● Supply voltage: 1.8 V, 3.0 V
    ● Page size
    – x 8 device: (512 + 16 spare) bytes
    – x 16 device: (256 + 8 spare) words
    ● Block size
    – x 8 device: (16 K + 512 spare) bytes
    – x 16 device: (8 K + 256 spare) words
    ● Page Read/Program
    – Random access: 12 µs (3 V)/15 µs (1.8 V) (max)
    – Sequential access: 30 ns (3 V)/50 ns (1.8 V) (min)
    – Page Program time: 200 µs (typ)
    ● Copy Back Program mode
    ● Fast Block Erase: 2 ms (typ)
    ● Status Register
    ● Electronic signature
    ● Chip Enable ‘don’t care’
    ● Serial Number option
    ● Hardware Data Protection
    – Program/Erase locked during Power transitions
    ● Data integrity
    – 100,000 Program/Erase cycles (with ECC)
    – 10 years Data Retention
    ● ECOPACK® packages
    ● Development tools
    – Error Correction Code models
    – Bad Blocks Management and Wear Leveling algorithms
    – Hardware simulation models

  • Similar parts: 9920 , Click to view
    Attributes Value
    Category Memory
    Manufacturer NANYA
    Product Category Memory ICs
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  • Shopping guide

    Warranty:
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    • - 90-day warranty against any manufacturing defects. View more
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Additional Information
  • Datasheet: Download ND512W3A2SN6
  • Chipdatas Part: CD93-ND512W3A2SN6
  • Warehouse: China, Hong Kong
  • Dispatch: Within 24 hours
  • Free Shipping: Yes
  • Prority Shipping: Yes, 3-5 days
  • Last Updated: 2024/06/14 00:26 +0800
Refund
    • Full Refund if you don't receive your order
    • Full or Partial Refund , If the item is not as described
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