FQD19N10LTM - Brand New onsemi Field Effect Tube (MOSFET)
In Stock:200000 ,Ready for Immediate Shipping
New
RoSH Lead free
In Stock:
200000,
Ready for Immediate Shipping
Brand:onsemi
Category:Field Effect Tube (MOSFET)
Chipdatas Part No.:CD94-FQD19N10LTM
Manufacturer Part No.:FQD19N10LTM
Datecode:09+
Package:TO-252-3, DPak 2 Leads + Tab, SC-63
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Description
Electronic Component Model: FQD19N10LTM is an N-Channel enhancement mode power field effect transistor. It is produced using Fairchild's proprietary, planar stripe, DMOS technology, which minimizes on-state resistance, provides superior switching performance, and can withstand high energy pulse in the avalanche and commutation mode. This transistor is ideal for low voltage applications such as high efficiency switching DC/DC converters and DC motor control.
Specifications and features
- 15.6A, 100V, RDS(on) = 0.1Ω @VGS = 10 V
- Low gate charge (typical 14 nC)
- Low Crss (typical 35 pF)
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability
Application Scenarios
This transistor is especially suitable for low voltage applications such as:
- High efficiency switching DC/DC converters
- DC motor control
Comparison
Advantages:
- Minimizes on-state resistance
- Provides superior switching performance
- Withstands high energy pulse in the avalanche and commutation mode
- Ideal for low voltage applications
- Fast switching speed
- 100% avalanche tested
- Improved dv/dt capability
Disadvantages:
- No specific disadvantages mentioned
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Datasheet
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Additional Information
- Datasheet: Download FQD19N10LTM
- Chipdatas Part: CD94-FQD19N10LTM
- Warehouse: China, Hong Kong
- Dispatch: Within 24 hours
- Free Shipping: Yes
- Prority Shipping: Yes, 3-5 days
- Last Updated: 2024/06/03 14:44 +0800
Refund
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- Full Refund if you don't receive your order
- Full or Partial Refund , If the item is not as described
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