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FQD19N10LTM - Brand New onsemi Field Effect Tube (MOSFET) - Datasheet - Chipdatas

FQD19N10LTM - Brand New onsemi Field Effect Tube (MOSFET)

In Stock:200000 ,Ready for Immediate Shipping
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In Stock: 200000, Ready for Immediate Shipping
Brand:onsemi
Chipdatas Part No.:CD94-FQD19N10LTM
Manufacturer Part No.:FQD19N10LTM
Datecode:09+
Package:TO-252-3, DPak 2 Leads + Tab, SC-63
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  • Description

    Electronic Component Model: FQD19N10LTM is an N-Channel enhancement mode power field effect transistor. It is produced using Fairchild's proprietary, planar stripe, DMOS technology, which minimizes on-state resistance, provides superior switching performance, and can withstand high energy pulse in the avalanche and commutation mode. This transistor is ideal for low voltage applications such as high efficiency switching DC/DC converters and DC motor control.

    Specifications and features

    • 15.6A, 100V, RDS(on) = 0.1Ω @VGS = 10 V
    • Low gate charge (typical 14 nC)
    • Low Crss (typical 35 pF)
    • Fast switching
    • 100% avalanche tested
    • Improved dv/dt capability

    Application Scenarios

    This transistor is especially suitable for low voltage applications such as:

    • High efficiency switching DC/DC converters
    • DC motor control

    Comparison

    Advantages:

    • Minimizes on-state resistance
    • Provides superior switching performance
    • Withstands high energy pulse in the avalanche and commutation mode
    • Ideal for low voltage applications
    • Fast switching speed
    • 100% avalanche tested
    • Improved dv/dt capability

    Disadvantages:

    • No specific disadvantages mentioned
  • Similar parts: 25937 , Click to view
    Attributes Value
    Category Field Effect Tube (MOSFET)
    Manufacturer onsemi
    Product Category FETs - Single
    Series QFET®
    Packaging Alternate Packaging
    Unit-Weight 0.009184 oz
    Mounting-Style SMD/SMT
    Package-Case TO-252-3, DPak (2 Leads + Tab), SC-63
    Technology Si
    Operating-Temperature -55°C ~ 150°C (TJ)
    Mounting-Type Surface Mount
    Number-of-Channels 1 Channel
    Supplier-Device-Package TO-252-3
    Configuration Single
    FET-Type MOSFET N-Channel, Metal Oxide
    Power-Max 2.5W
    Transistor-Type 1 N-Channel
    VDSS – Drain-Source Voltage 100V
    Input Capacitance 870pF @ 25V
    FET-Feature Standard
    Current-Continuous-Drain-Id-25°C 15.6A (Tc)
    Rds-On-Max-Id-Vgs 100 mOhm @ 7.8A, 10V
    Vgs-th-Max-Id 2V @ 250μA
    Gate-Charge-Qg-Vgs 18nC @ 5V
    Pd-Power-Dissipation 2.5 W
    Maximum Operating Temperature + 150 C
    Operating temperature range - 55 C
    Fall-Time 140 ns
    Rise-Time 410 ns
    Vgs-Gate-Source-Voltage 20 V
    ID (drain current) 15.6 A
    Vds-Drain-Source-Breakdown-Voltage 100 V
    Rds-On-Drain-Source-Resistance 100 mOhms
    Transistor-Polarity N-Channel
    Typical-Turn-Off-Delay-Time 20 ns
    Turn-On Delay Time 14 ns
    Transconductance 14 S
    Channel-Mode Enhancement
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  • Shopping guide

    Warranty:
    • - 30-day money-back return policy,
    • - 90-day warranty against any manufacturing defects. View more
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Additional Information
  • Datasheet: Download FQD19N10LTM
  • Chipdatas Part: CD94-FQD19N10LTM
  • Warehouse: China, Hong Kong
  • Dispatch: Within 24 hours
  • Free Shipping: Yes
  • Prority Shipping: Yes, 3-5 days
  • Last Updated: 2024/06/03 14:44 +0800
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    • Full Refund if you don't receive your order
    • Full or Partial Refund , If the item is not as described
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