RF320619(CDC7005ZVA) - Brand New Texas Instruments IC Chips
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Description
These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.
Specifications and features
- 2.8A and 3.3A, 350V and 400V
- rDS(ON)= 1.8 ohm and 2.5 ohm
- Single Pulse Avalanche Energy Rated
- SOA is Power Dissipation Limited
- Nanosecond Switching Speeds
- Linear Transfer Characteristics
- High Input Impedance
- Majority Carrier Device
- Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”
Application Scenarios
These power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. They can be operated directly from integrated circuits.
Comparison
Advantages and disadvantages of this model have not been provided.
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Similar parts: 430483 , Click to view
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Datasheet
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Shopping guide
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Popular parts of the same kind
- Datasheet: Download RF320619(CDC7005ZVA)
- Chipdatas Part: CD87-RF320619(CDC7005ZVA)
- Warehouse: China, Hong Kong
- Dispatch: Within 24 hours
- Free Shipping: Yes
- Prority Shipping: Yes, 3-5 days
- Last Updated: 2024/09/08 09:20 +0800
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The fee is charged according to the rule of PayPal.
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