Description

The SST39VF088-70-4C-EK is a 1M x8 CMOS Multi-Purpose Flash (MPF) manufactured with SST's proprietary, high-performance CMOS SuperFlash technology. It features a split-gate cell design and thick-oxide tunneling injector, which provides better reliability and manufacturability compared to alternate approaches. This device operates on a power supply of 2.7-3.6V and conforms to JEDEC standard pinouts for x8 memories.

Specifications and features

• Organized as 1M x8
• Single Voltage Read and Write Operations: 2.7-3.6V
• Superior Reliability:
  • Endurance: 100,000 Cycles (typical)
  • Data Retention: Greater than 100 years
• Low Power Consumption (typical values at 5 MHz):
  • Active Current: 12 mA
  • Standby Current: 4 µA
• Sector-Erase Capability:
  • Uniform 4 KByte sectors
• Block-Erase Capability:
  • Uniform 64 KByte blocks
• Fast Read Access Time: 70 and 90 ns
• Latched Address and Data
• Fast Erase and Byte-Program:
  • Sector-Erase Time: 18 ms (typical)
  • Block-Erase Time: 18 ms (typical)
  • Chip-Erase Time: 70 ms (typical)
  • Byte-Program Time: 14 µs (typical)
  • Chip Rewrite Time: 15 seconds (typical)
• Automatic Write Timing:
  • Internal VPP Generation
• End-of-Write Detection:
  • Toggle Bit
  • Data# Polling
• CMOS I/O Compatibility
• JEDEC Standard:
  • Flash EEPROM Pinouts and command sets
• Packages Available: 48-lead TSOP (12mm x 20mm)

Application Scenarios

This model of electronic component is commonly used in applications that require non-volatile storage and reliable data retention. It is suitable for use in various electronic devices such as microcontrollers, automotive systems, consumer electronics, and more.

Comparison

• High-performance CMOS SuperFlash technology
• Superior reliability and manufacturability
• Low power consumption
• Fast erase and byte-program time
• Automatic write timing

• Requires a power supply of 2.7-3.6V
• Limited memory capacity (1M x8)