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FDN327N - Brand New onsemi Field Effect Tube (MOSFET) - Datasheet - Chipdatas

FDN327N - Brand New onsemi Field Effect Tube (MOSFET)

In Stock:200000 ,Ready for Immediate Shipping
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In Stock: 200000, Ready for Immediate Shipping
Brand:onsemi
Chipdatas Part No.:CD88-FDN327N
Manufacturer Part No.:FDN327N
Datecode:09+
Package:SOT-563
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  • Description

    The FDN327N is a N-channel MOSFET designed for power management and load switch applications. It uses high voltage PowerTrench® process and is specified for 20V.

    Specifications and Features

    • Fast switching speed
    • 4.5nC typical low gate charge

    Application Scenarios

    The FDN327N is commonly used in power management and load switch applications.

    Comparison

    Advantages
    • The FDN327N has a fast switching speed which makes it suitable for high frequency applications.
    • It has a low gate charge which results in less power loss and high efficiency.
    Disadvantages
    • The FDN327N is specified for a low voltage of 20V which may not be suitable for applications requiring higher voltage tolerance.
  • Similar parts: 25937 , Click to view
    Attributes Value
    Category Field Effect Tube (MOSFET)
    Manufacturer onsemi
    Product Category FETs - Single
    Series PowerTrench®
    Packaging Alternate Packaging
    Part-Aliases FDN327N_NL
    Unit-Weight 0.001058 oz
    Mounting-Style SMD/SMT
    Package-Case TO-236-3, SC-59, SOT-23-3
    Technology Si
    Operating-Temperature -55°C ~ 150°C (TJ)
    Mounting-Type Surface Mount
    Number-of-Channels 1 Channel
    Supplier-Device-Package SuperSOT-3
    Configuration Single
    FET-Type MOSFET N-Channel, Metal Oxide
    Power-Max 460mW
    Transistor-Type 1 N-Channel
    VDSS – Drain-Source Voltage 20V
    Input Capacitance 423pF @ 10V
    FET-Feature Logic Level Gate, 1.8V Drive
    Current-Continuous-Drain-Id-25°C 2A (Ta)
    Rds-On-Max-Id-Vgs 70 mOhm @ 2A, 4.5V
    Vgs-th-Max-Id 1.5V @ 250μA
    Gate-Charge-Qg-Vgs 6.3nC @ 4.5V
    Pd-Power-Dissipation 500 mW
    Maximum Operating Temperature + 150 C
    Operating temperature range - 55 C
    Fall-Time 6.5 ns
    Rise-Time 6.5 ns
    Vgs-Gate-Source-Voltage 8 V
    ID (drain current) 2 A
    Vds-Drain-Source-Breakdown-Voltage 20 V
    Rds-On-Drain-Source-Resistance 40 mOhms
    Transistor-Polarity N-Channel
    Typical-Turn-Off-Delay-Time 14 ns
    Turn-On Delay Time 6 ns
    Transconductance 11 S
    Channel-Mode Enhancement
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  • Shopping guide

    Warranty:
    • - 30-day money-back return policy,
    • - 90-day warranty against any manufacturing defects. View more
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Contact us
Additional Information
  • Datasheet: Download FDN327N
  • Chipdatas Part: CD88-FDN327N
  • Warehouse: China, Hong Kong
  • Dispatch: Within 24 hours
  • Free Shipping: Yes
  • Prority Shipping: Yes, 3-5 days
  • Last Updated: 2024/05/11 19:48 +0800
Refund
    • Full Refund if you don't receive your order
    • Full or Partial Refund , If the item is not as described
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