INA208AIDGSR - Brand New Texas Instruments Current Regulation/Management
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Description
The INA208AIDGSR is an electronic component model that falls under the category of Current Regulation/Management. It is an n-MOS floating gate electrically erasable programmable read only memory (EEPROM), with a capacity of 8-Kbits (1024 x 8-bit) and works in systems with serial I2C-bus. The programming of the array is implemented by electron's tunneling. The programming voltage is generated on-chip, using a voltage multiplier. The device is functionally identical to the SDA2586 Siemen's model, and is available in 8-pin DIP and 8-pin SOP.
Specifications and features
- Non-volatile storage of information during 10 years
- Single supply (Ucc=4,75 B - 5,25 B)
- On-chip voltage multiplier
- On-chip generator of bulk biasing
- Serial input/output I2C-bus
- 10 000 ERASE/WRITE cycles per byte
- Internal reprogramming (no external components)
- Duration of the ERASE/WRITE cycle is 15 ms
- Temperature range: 0 ÷ +70°C
Application Scenarios
The INA208AIDGSR is typically used in electronic devices that require electronically programmable, read-only memory such as microcontrollers, microprocessors and other digital circuits.
Comparison
Advantages- Non-volatile storage of information during 10 years
- On-chip reprogramming (no external components)
- 10,000 ERASE/WRITE cycles per byte
- Serial input/output I2C-bus
Disadvantages- Temperature range limited to 0 ÷ +70°C
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Datasheet
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- Datasheet: Download INA208AIDGSR
- Chipdatas Part: CD90-INA208AIDGSR
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- Last Updated: 2024/10/01 14:15 +0800
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