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JANTXV2N6766 - Brand New IR Field Effect Tube (MOSFET) - Datasheet - Chipdatas

JANTXV2N6766 - Brand New IR Field Effect Tube (MOSFET)

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Brand:IR
Chipdatas Part No.:CD93-JANTXV2N6766
Manufacturer Part No.:JANTXV2N6766
Datecode:09+
Package:TO-204AE
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  • Description

    The JANTXV2N6766 is an electronic component model that falls under the category of Field Effect Tube (MOSFET).

    The product features a voltage rating of 200 Volts and an on-state resistance of 0.085Ω. It utilizes the advanced HEXFET technology developed by International Rectifier.

    HEXFET transistors are known for their efficient geometry, which enables them to achieve low on-state resistance and high transconductance. They possess all the advantages of MOSFETs, such as voltage control, fast switching, ease of paralleling, and temperature stability of electrical parameters.

    These transistors are suitable for a wide range of applications, including switching power supplies, motor controls, inverters, choppers, audio amplifiers, high energy pulse circuits, and any other application that demands high reliability.

    Specifications and features

    - Avalanche Energy Rating

    - Dynamic dv/dt Rating

    - Simple Drive Requirements

    - Ease of Paralleling

    - Hermetically Sealed

    Application Scenarios

    - Switching power supplies

    - Motor controls

    - Inverters

    - Choppers

    - Audio amplifiers

    - High energy pulse circuits

    - Any application that requires high reliability

    Comparison

    Advantages

    - Efficient HEXFET technology

    - Low on-state resistance

    - High transconductance

    - Voltage control

    - Fast switching

    - Ease of paralleling

    - Temperature stability of electrical parameters

    Disadvantages

    - None mentioned

  • Similar parts: 25937 , Click to view
    Attributes Value
    Category Field Effect Tube (MOSFET)
    Manufacturer Microsemi Corporation
    Product Category FETs - Single
    Categories Transistors - FETs, MOSFETs - Single
    Series Military, MIL-PRF-19500/543
    Packaging Bulk
    Part-Status Obsolete
    FET-Type N-Channel
    Technology MOSFET (Metal Oxide)
    Drain-to-Source-Voltage-Vdss 200V
    Current-Continuous-Drain-Id-25°C 30A (Tc)
    Drive-Voltage-Max-Rds-On-Min-Rds-On 10V
    Vgs-th-Max-Id 4V @ 250?A
    Gate-Charge-Qg-Max-Vgs 115nC @ 10V
    Vgs-Max ±20V
    FET-Feature -
    Power-Dissipation-Max 4W (Ta), 150W (Tc)
    Rds-On-Max-Id-Vgs 90 mOhm @ 30A, 10V
    Operating-Temperature -55°C ~ 150°C (TJ)
    Mounting-Type Through Hole
    Supplier-Device-Package TO-3
    Package-Case TO-204AE
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  • Shopping guide

    Warranty:
    • - 30-day money-back return policy,
    • - 90-day warranty against any manufacturing defects. View more
    Returning:
    Within 30 days from date of shipment. View more

    Delivery period:
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    • - DHL Express: 3-7 business days
    • - DHL eCommerce: 12-22 business days
    • - FedEx International Priority: 3-7 business days
    • - EMS: 10-15 business days
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Additional Information
  • Datasheet: Download JANTXV2N6766
  • Chipdatas Part: CD93-JANTXV2N6766
  • Warehouse: China, Hong Kong
  • Dispatch: Within 24 hours
  • Free Shipping: Yes
  • Prority Shipping: Yes, 3-5 days
  • Last Updated: 2024/06/13 08:09 +0800
Refund
    • Full Refund if you don't receive your order
    • Full or Partial Refund , If the item is not as described
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