MBM29DL163BE70PBT-QE1 - Brand New FUJITSU IC Chips
In Stock:17575 ,Ready for Immediate Shipping
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In Stock:
17575,
Ready for Immediate Shipping
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Description
The MBM29DL163BE70PBT-QE1 is a 16M-bit, 3.0 V-only Flash memory. It is organized as 2M bytes of 8 bits each or 1M words of 16 bits each. This electronic component is designed to be programmed in-system with a standard 3.0 V VCC supply, eliminating the need for 12.0 V VPP and 5.0 V VCC for write or erase operations. It can also be reprogrammed in standard EPROM programmers. The MBM29DL163BE70PBT-QE1 is organized into two banks, Bank 1 and Bank 2, allowing a normal non-delayed read access from a non-busy bank while an embedded write operation is taking place on the other bank.
Specifications and features
- 0.23 µm Process Technology
- Simultaneous Read/Write operations (dual bank)
- Multiple devices available with different bank sizes
- Zero latency between read and write operations
- Single 3.0 V read, program, and erase
- Compatible with JEDEC-standard commands
- Compatible with JEDEC-standard world-wide pinouts
- Minimum 100,000 program/erase cycles
- High performance with 70 ns maximum access time
- Sector erase architecture with options for concurrent erasure and full chip erase
- Boot Code Sector Architecture with a hidden ROM region
- WP/ACC input pin for boot sector protection and increased program performance
- Embedded EraseTM Algorithms for automatic pre-programming and erasure
- Embedded ProgramTM Algorithms for automatic writing and verification
- Data Polling and Toggle Bit feature for cycle completion detection
- Ready/Busy output (RY/BY) for cycle completion detection
- Automatic sleep mode for low power consumption
- Low VCC write inhibit ≤ 2.5 V
- Program Suspend/Resume and Erase Suspend/Resume functions
- Sector group protection and Temporary sector group unprotection
- In accordance with CFI (Common Flash Memory Interface)
Application Scenarios
The MBM29DL163BE70PBT-QE1 is commonly used in various electronic devices and systems that require non-volatile memory storage. It is suitable for applications such as consumer electronics, automotive systems, industrial equipment, and communication devices.
Comparison
Advantages- Simultaneous Read/Write operations with dual bank architecture
- Low power consumption with a single 3.0 V read, program, and erase
- Compatible with JEDEC-standard commands and world-wide pinouts
Disadvantages- Requires specific programming and erasing commands for operation
- Limited to a maximum of 100,000 program/erase cycles
- Access time of 70 ns may not be suitable for some high-performance applications
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Similar parts: 430483 , Click to view
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Datasheet
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Shopping guide
Delivery period:
- - Will ship out in 2-3 days
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- - EMS: 10-15 business days
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DHL, FedEx, EMS, SF Express, and Registered Air MailShipping tracking:
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Additional Information
- Datasheet: Download MBM29DL163BE70PBT-QE1
- Chipdatas Part: CD86-MBM29DL163BE70PBT-QE1
- Warehouse: China, Hong Kong
- Dispatch: Within 24 hours
- Free Shipping: Yes
- Prority Shipping: Yes, 3-5 days
- Last Updated: 2024/06/29 04:46 +0800
Refund
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- Full Refund if you don't receive your order
- Full or Partial Refund , If the item is not as described
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