Description

The MBM29DL163BE70PBT-QE1 is a 16M-bit, 3.0 V-only Flash memory. It is organized as 2M bytes of 8 bits each or 1M words of 16 bits each. This electronic component is designed to be programmed in-system with a standard 3.0 V VCC supply, eliminating the need for 12.0 V VPP and 5.0 V VCC for write or erase operations. It can also be reprogrammed in standard EPROM programmers. The MBM29DL163BE70PBT-QE1 is organized into two banks, Bank 1 and Bank 2, allowing a normal non-delayed read access from a non-busy bank while an embedded write operation is taking place on the other bank.

Specifications and features

• 0.23 µm Process Technology
• Simultaneous Read/Write operations (dual bank)
• Multiple devices available with different bank sizes
• Zero latency between read and write operations
• Single 3.0 V read, program, and erase
• Compatible with JEDEC-standard commands
• Compatible with JEDEC-standard world-wide pinouts
• Minimum 100,000 program/erase cycles
• High performance with 70 ns maximum access time
• Sector erase architecture with options for concurrent erasure and full chip erase
• Boot Code Sector Architecture with a hidden ROM region
• WP/ACC input pin for boot sector protection and increased program performance
• Embedded EraseTM Algorithms for automatic pre-programming and erasure
• Embedded ProgramTM Algorithms for automatic writing and verification
• Data Polling and Toggle Bit feature for cycle completion detection
• Ready/Busy output (RY/BY) for cycle completion detection
• Automatic sleep mode for low power consumption
• Low VCC write inhibit ≤ 2.5 V
• Program Suspend/Resume and Erase Suspend/Resume functions
• Sector group protection and Temporary sector group unprotection
• In accordance with CFI (Common Flash Memory Interface)

Application Scenarios

The MBM29DL163BE70PBT-QE1 is commonly used in various electronic devices and systems that require non-volatile memory storage. It is suitable for applications such as consumer electronics, automotive systems, industrial equipment, and communication devices.

Comparison

• Simultaneous Read/Write operations with dual bank architecture
• Low power consumption with a single 3.0 V read, program, and erase
• Compatible with JEDEC-standard commands and world-wide pinouts

• Requires specific programming and erasing commands for operation
• Limited to a maximum of 100,000 program/erase cycles
• Access time of 70 ns may not be suitable for some high-performance applications