SI7852DP-T1-GE3 - Brand New VISHAY Field Effect Tube (MOSFET)
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Description
The VISHAY SI7852DP-T1-GE3 is a single MOSFET with 7.6 A current rating, SMD/SMT 1 channel, and 55°C SO-8 1.9 W N-Channel 80 V. This FET is designed for use in a wide range of applications, including power management, motor control, and switching. It features a low on-resistance of 0.0045 ohms, a low gate charge of 4.5 nC, and a low input capacitance of 8.5 pF. The FET is also RoHS compliant and has a maximum operating temperature of +150°C. This FET is ideal for applications that require high efficiency, low power consumption, and reliable performance.
Specifications and features
Current Rating: 7.6 A
Channel: SMD/SMT 1
Package Type: SO-8
Power Dissipation: 1.9 W
Transistor Type: N-Channel
Drain-to-Source Voltage: 80 V
On-Resistance: 0.0045 ohms
Gate Charge: 4.5 nC
Input Capacitance: 8.5 pF
Compliance: RoHS
Maximum Operating Temperature: +150°C
Application Scenarios
This MOSFET can be used in a variety of applications, including:
- Power management
- Motor control
- Switching
Comparison
Advantages- High efficiency
- Low power consumption
- Reliable performance
Disadvantages- None identified
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Similar parts: 25937 , Click to view
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Datasheet
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Shopping guide
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Popular parts of the same kind
- Datasheet: Download SI7852DP-T1-GE3
- Chipdatas Part: CD94-SI7852DP-T1-GE3
- Warehouse: China, Hong Kong
- Dispatch: Within 24 hours
- Free Shipping: Yes
- Prority Shipping: Yes, 3-5 days
- Last Updated: 2024/06/30 07:28 +0800
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- Full Refund if you don't receive your order
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