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Description
These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA09378.
Specifications and Features
• 2A, 50V and 60V
• rDS(ON) = 0.95Ω
• SOA is Power-Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Majority Carrier Device
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”
Application Scenarios
These N-Channel enhancement mode silicon gate power field effect transistors are suitable for various applications, including:
- Switching regulators
- Switching converters
- Motor drivers
- Relay drivers
- Drivers for high power bipolar switching transistors
Comparison
Advantages:
- High speed
- Low gate drive power
- Can be operated directly from integrated circuits
Disadvantages:
- None mentioned
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Similar parts: 430483 , Click to view
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Datasheet
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- Last Updated: 2024/09/29 01:06 +0800
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