Description

The SPF3001 is a high performance pHEMT Gallium Arsenide FET designed for DC-10 GHz operation. Manufactured with a 0.25µm process, this device is suitable for use as a driver stage in many LNA applications, particularly in commercial and industrial settings. The device can deliver excellent OIP3 at a 5V, 40mA bias or provide low noise performance at a 3V, 20mA bias for battery-powered requirements.

Specifications and Features

• DC-10 GHz Operation
• Ultra Low NF: 0.25 dB @ 1 GHz, 0.50 dB @ 2 GHz
• High Assoc. Gain: 25 dB @ 1 GHz, 22 dB @ 2 GHz
• Low Current Draw for NFopt (3V,20mA)
• +32 dBm OIP3, +20 dBm P1dB (5V,40mA)
• Low Cost High Performance pHEMT

Application Scenarios

• LNA for Wireless Infrastructure
• Fixed Wireless Infrastructure
• Wireless Data
• Driver Stage for Low Power Applications

Comparison

• High associated gain for improved performance
• Low current draw at optimal noise figure bias
• Available at a lower cost than other high-performance pHEMT devices

• No information on compatibility with other components or devices
• No mention of alternative bias options or settings for different applications