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Description
RD12MVS1-T112 is a MOS FET type transistor that is specifically designed for VHF RF power amplifier applications. It is categorized as an IC chip which makes it a versatile component for a wide range of electronic devices.
Specifications and features
The RD12MVS1-T112 has the following features:
- High Power Gain: Pout > 11.5W, Gp > 10.0dB @ Vds = 7.2V, f=175MHz
- High Efficiency: 57% typ. (175MHz)
Application Scenarios
The RD12MVS1-T112 is suitable for the output stage of high power amplifiers in VHF band mobile radio sets. With its high power gain, it can deliver excellent performance in transmitting high-quality audio signals over long distances.
Comparison
Advantages- The RD12MVS1-T112 is a versatile MOS FET transistor that is specifically designed to operate in VHF RF power amplifier applications.
- The component has a high power gain that enables it to transmit high-quality audio signals over long distances.
- RD12MVS1-T112 has high efficiency (57% typ.) at 175MHz.
Disadvantages- The component might not be suitable for low power applications because of its high power gain.
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Datasheet
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Shopping guide
Delivery period:
- - Will ship out in 2-3 days
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- - EMS: 10-15 business days
Shipping fee:
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Shipping option:
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How to Buy:
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Additional Information
- Datasheet: Download RD12MVS1-T112
- Chipdatas Part: CD92-RD12MVS1-T112
- Warehouse: China, Hong Kong
- Dispatch: Within 24 hours
- Free Shipping: Yes
- Prority Shipping: Yes, 3-5 days
- Last Updated: 2024/10/01 21:13 +0800
Refund
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- Full Refund if you don't receive your order
- Full or Partial Refund , If the item is not as described
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Payment Method
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The fee is charged according to the rule of PayPal.
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Western Union charge US$0.00 banking fee.
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We recommend to use bank transfer for large orders to save on handling fees.
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