HN1C03F-B - Brand New TOSHIBA Transistors (BJT) - Arrays
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Ready for Immediate Shipping
Brand:TOSHIBA
Category:Transistors (BJT) - Arrays
Chipdatas Part No.:CD87-HN1C03F-B
Manufacturer Part No.:HN1C03F-B
Datecode:09+
Package:SOT-163
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Description
The electronic component model HN1C03F-B is a transistor array designed specifically for muting and switching applications. It includes two devices in a super mini type package with 6 leads. The HN1C03F-B has a high emitter-base voltage of VEBO = 25V (min). It also features a high reverse hFE of 150 (typ.) under the conditions of VCE = -2V and IC = -4mA. Additionally, this component has a low on resistance of RON = 1Ω (typ.) when IB = 5mA.
Specifications and Features
- Product Category: Transistors (BJT) - Arrays
- Package Type: SM6 (Super mini type with 6 leads)
- High emitter-base voltage: VEBO = 25V (min)
- High reverse hFE: reverse hFE = 150 (typ.) (VCE = -2V, IC = -4mA)
- Low on resistance: RON = 1Ω (typ.) (IB = 5mA)
Application Scenarios
The HN1C03F-B transistor array is commonly used in muting and switching applications. Its compact size and high performance make it ideal for various electronic devices and circuits that require muting and switching functionalities.
Comparison
- Advantages:
- - Compact size
- - High emitter-base voltage
- - High reverse hFE
- - Low on resistance
- Disadvantages:
- - Limited to muting and switching applications
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Datasheet
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Additional Information
- Datasheet: Download HN1C03F-B
- Chipdatas Part: CD87-HN1C03F-B
- Warehouse: China, Hong Kong
- Dispatch: Within 24 hours
- Free Shipping: Yes
- Prority Shipping: Yes, 3-5 days
- Last Updated: 2024/09/18 11:23 +0800
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- Full Refund if you don't receive your order
- Full or Partial Refund , If the item is not as described
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