Description

The TP3057B is an electronic component model belonging to the Interface - CODECs product category. It is a TMOS V™ Power Field Effect Transistor, specifically an N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET with a rating of 12 Amperes and 60 Volts RDS(on)= 0.15 OHM. This model utilizes new technology to achieve an on–resistance area that is about one-half that of standard MOSFETs, resulting in increased cell density. It is designed to withstand high energy in the avalanche and commutation modes.

Specifications and features

• On–resistance Area Product about One–half that of Standard MOSFETs with New Low Voltage, Low RDS(on) Technology
• Faster Switching than E–FET Predecessors
• Avalanche Energy Specified
• IDSS and VDS(on) Specified at Elevated Temperature
• Static Parameters are the Same for both TMOS V and TMOS E–FET

Application Scenarios

The TP3057B is commonly used in applications that require high-power switching and control, such as power amplifiers, motor control circuits, and power supply units.

Comparison

• New technology with reduced on-resistance area compared to standard MOSFETs
• Increased cell density
• Designed to withstand high energy in avalanche and commutation modes

• No specific disadvantages identified for this model