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RD38F2230WWZDQ0ES - Brand New Intel IC Chips - Datasheet - Chipdatas

RD38F2230WWZDQ0ES - Brand New Intel IC Chips

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In Stock: 462, Ready for Immediate Shipping
Brand:Intel
Category:IC Chips
Chipdatas Part No.:CD89-RD38F2230WWZDQ0ES
Manufacturer Part No.:RD38F2230WWZDQ0ES
Datecode:09+
Package:BGA
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  • Description

    This document contains the specifications for the Intel® Advanced+ Boot Block Flash Memory (C3) Stacked Chip Scale Package (SCSP) device. C3 SCSP memory solutions are offered in different combinations, such as 32-Mbit flash + 8-Mbit SRAM, 32-Mbit flash + 4-Mbit SRAM, 16-Mbit flash + 4-Mbit SRAM, and 16-Mbit flash memory + 2-Mbit SRAM. The C3 SCSP device combines flash memory and SRAM into a single package, offering secure low-voltage memory solutions for portable applications. The flash memory provides enhanced security, instant locking/unlocking of any flash block with zero-latency, a 128-bit protection register for unique device identification, and improved 12V production programming for increased factory throughput.

    Specifications and features

    The RD38F2230WWZDQ0ES model features flash memory plus SRAM, reducing memory board space and simplifying PCB design complexity. It utilizes SCSP technology, which provides the smallest memory subsystem footprint with areas ranging from 8 x 10 mm to 8 x 12 mm. The height of the device ranges from 1.20 mm to 1.40 mm, depending on the specific configuration. The advanced SRAM technology offers 70 ns access time, low power operation, and low voltage data retention mode. The device also includes Intel® Flash Data Integrator (FDI) software for real-time data storage and code execution in the same memory device, as well as advanced+ boot block flash memory with features such as instant, individual block locking and a 128-bit protection register. The blocking architecture includes block sizes for code + data storage, 4-Kword parameter blocks, and 64-Kbyte main blocks with 100,000 erase cycles per block. The device operates with low power consumption, with asynchronous read current of 9 mA (flash) and standby current of 7 µA (flash). It utilizes various flash technologies such as 0.25 µm ETOX™ VI, 0.18 µm ETOX™ VII, and 0.13 µm ETOX™ VIII.

    Application Scenarios

    The RD38F2230WWZDQ0ES model is suitable for a wide range of portable applications that require secure low-voltage memory solutions. It can be used in devices such as smartphones, tablets, portable gaming consoles, and other electronic devices that require both flash memory and SRAM in a compact package.

    Comparison

    Advantages

    - Secure low-voltage memory solutions
    - Combination of flash memory and SRAM in a single package
    - Enhanced security with instant locking/unlocking of flash blocks
    - Unique device identification with a 128-bit protection register
    - Improved factory throughput with 12V production programming
    - Smallest memory subsystem footprint with SCSP technology
    - Advanced SRAM technology with low power operation
    - Real-time data storage and code execution with Intel® FDI software
    - Various flash technologies for different requirements

    Disadvantages

    - Not suitable for applications that don't require flash memory and SRAM combination
    - Limited to specific configurations offered by C3 SCSP memory solutions

  • Similar parts: 430483 , Click to view
    Attributes Value
    Category IC Chips
    Manufacturer INTEL
    Product Category IC Chips
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  • Datasheet: Download RD38F2230WWZDQ0ES
  • Chipdatas Part: CD89-RD38F2230WWZDQ0ES
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  • Last Updated: 2024/06/30 18:53 +0800
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