UPD4564323G5-A10B-9 - Brand New NEC IC Chips
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Description
The µPD4564323 is a high-speed 67,108,864-bit synchronous dynamic random-access memory, organized as 524,288 words × 32 bits × 4 banks. The synchronous DRAMs achieved high-speed data transfer using the pipeline architecture. All inputs and outputs are synchronized with the positive edge of the clock. The synchronous DRAMs are compatible with Low Voltage TTL (LVTTL). These products are packaged in 86-pin TSOP (II).
Specifications and features
• Fully Synchronous Dynamic RAM, with all signals referenced to a positive clock edge. Pulsed interface. Possible to assert random column address in every cycle. Quad internal banks controlled by BA0 and BA1 (Bank Select). ×32 organization. Byte control by DQM0, DQM1, DQM2 and DQM3. Programmable Wrap sequence (Sequential / Interleave). Programmable burst length (1, 2, 4, 8 and full page). Programmable /CAS latency (2 and 3). Automatic precharge and controlled precharge. CBR (Auto) refresh and self refresh. Single 3.3 V ± 0.3 V power supply. LVTTL compatible inputs and outputs. 4,096 refresh cycles / 64 ms. Burst termination by Burst stop command and Precharge command.
Application Scenarios
None
Comparison
None
AdvantagesNone
DisadvantagesNone
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Similar parts: 430483 , Click to view
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Datasheet
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Shopping guide
Delivery period:
- - Will ship out in 2-3 days
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Popular parts of the same kind
- Datasheet: Download UPD4564323G5-A10B-9
- Chipdatas Part: CD94-UPD4564323G5-A10B-9
- Warehouse: China, Hong Kong
- Dispatch: Within 24 hours
- Free Shipping: Yes
- Prority Shipping: Yes, 3-5 days
- Last Updated: 2024/06/03 10:30 +0800
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- Full Refund if you don't receive your order
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The fee is charged according to the rule of PayPal.
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Western Union charge US$0.00 banking fee.
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