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Description
The Intel StrataFlash® wireless memory (L18) device is the latest generation of Intel StrataFlash® memory devices featuring flexible, multiple-partition, dual operation. It provides high performance synchronous-burst read mode and asynchronous read mode using 1.8 V low voltage, multi-level cell (MLC) technology.
Specifications and features
■ High performance Read-While-Write/Erase
— 85 ns initial access
— 54 MHz with zero wait state, 14 ns clock-to-data output synchronous-burst mode
— 25 ns asynchronous-page mode
— 4-, 8-, 16-, and continuous-word burst mode
— Burst suspend
— Programmable WAIT configuration
— Buffered Enhanced Factory Programming (BEFP) at 5 µs/byte (Typ)
— 1.8 V low-power buffered programming at7 µs/byte (Typ)
■ Architecture
— Asymmetrically-blocked architecture
— Multiple 8-Mbit partitions: 64-Mbit and 128-Mbit devices
— Multiple 16-Mbit partitions: 256-Mbit devices
— Four 16-Kword parameter blocks: top or bottom configurations
— 64-Kword main blocks
— Dual-operation: Read-While-Write (RWW) or Read-While-Erase (RWE)
— Status Register for partition and device status
■ Power
— VCC (core) = 1.7 V - 2.0 V
— VCCQ (I/O) = 1.35 V - 2.0 V, 1.7 V - 2.0 V
— Standby current: 30 µA (Typ) for 256-Mbit
— 4-Word synchronous read current: 15 mA (Typ)at 54 MHz
— Automatic Power Savings mode
■ Security
— OTP space:
• 64 unique factory device identifier bits
• 64 user-programmable OTP bits
• Additional 2048 user-programmable OTP bits
— Absolute write protection: VPP = GND
— Power-transition erase/program lockout
— Individual zero-latency block locking
— Individual block lock-down
■ Software
— 20 µs (Typ) program suspend
— 20 µs (Typ) erase suspend
— Intel® Flash Data Integrator optimized
— Basic Command Set (BCS) and Extended Command Set (ECS) compatible
— Common Flash Interface (CFI) capable
■ Quality and Reliability
— Expanded temperature: –25° C to +85° C
— Minimum 100,000 erase cycles per block
— ETOX™ VIII process technology (0.13 µm)
■ Density and Packaging
— 64-, 128-, and 256-Mbit density in VF BGA packages
— 128/0 and 256/0 density in SCSP
— 16-bit wide data busApplication Scenarios
This electronic component model, GE28F256L18B, can be used in various applications such as wireless devices, digital cameras, mobile phones, and other electronic devices that require high performance memory with low voltage and flexible operation.
Comparison
Advantages- High performance synchronous-burst read mode
- Flexible, multiple-partition, dual operation
- 1.8 V low voltage, multi-level cell (MLC) technology
- Asynchronous read mode
- 64-bit unique factory device identifier bits
- 64-bit user-programmable OTP bits
- Additional 2048 user-programmable OTP bits
- Expanded temperature range: –25° C to +85° C
- Minimum 100,000 erase cycles per block
- ETOX™ VIII process technology (0.13 µm)
Disadvantages- Standby current: 30 µA (Typ) for 256-Mbit
- 4-Word synchronous read current: 15 mA (Typ) at 54 MHz
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Datasheet
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Shopping guide
Delivery period:
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- Datasheet: Download GE28F256L18B
- Chipdatas Part: CD90-GE28F256L18B
- Warehouse: China, Hong Kong
- Dispatch: Within 24 hours
- Free Shipping: Yes
- Prority Shipping: Yes, 3-5 days
- Last Updated: 2024/06/03 08:50 +0800
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- Full or Partial Refund , If the item is not as described
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