NANDC9R4N0AZBA5 - Brand New STMicroelectronics IC Chips
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Description
The NANDC9R4N0AZBA5 is a non-volatile Flash memory component that belongs to the NAND Flash 528 Byte/ 264 Word Page family. It utilizes the Single Level Cell (SLC) NAND cell technology and is available in sizes ranging from 128Mbits to 1Gbit. The component operates with either a 1.8V or 3V voltage supply, and the size of a Page is either 528 Bytes or 264 Words depending on the bus width of the device. The NANDC9R4N0AZBA5 offers a multiplexed Address/Data interface, reducing pin count and enabling easy migration to other densities without changing the footprint.
Specifications and features
- High density NAND Flash memories with up to 1 Gbit memory array.
- Cost-effective solutions for mass storage applications.
- NAND interface with x8 or x16 bus width and multiplexed Address/Data.
- Supply voltage options: 1.8V device with VDD = 1.7 to 1.95V, or 3.0V device with VDD = 2.7 to 3.6V.
- Page sizes of (512 + 16 spare) Bytes for x8 device or (256 + 8 spare) Words for x16 device.
- Block sizes of (16K + 512 spare) Bytes for x8 device or (8K + 256 spare) Words for x16 device.
- Fast page read/program access with random access time of 12µs (max) and sequential access time of 50ns (min).
- Copy back program mode for fast page copy without external buffering.
- Fast block erase time of 2ms (typ).
- Features status register, electronic signature, chip enable 'don't care' option, and serial number option.
- Hardware data protection to lock program/erase functions during power transitions.
- Offers data integrity with 100,000 Program/Erase cycles and 10 years of data retention.
- RoHS compliant and lead-free components.
- Development tools include error correction code software and hardware models, bad block management and wear leveling algorithms, file system OS native reference software, and hardware simulation models.Application Scenarios
The NANDC9R4N0AZBA5 is suitable for various applications including:
- Mass storage devices
- Embedded systems
- Data storage solutions
- Industrial control systems
Comparison
Advantages- High density memory array allows for efficient storage capacity.
- Cost-effective solution for mass storage applications.
- Easy migration to other densities without changing the footprint.
- Offers various development tools and software for easier integration.
- Data integrity with high Program/Erase cycles and long data retention.
- RoHS compliant and lead-free components.Disadvantages- Not suitable for applications requiring lower density memory.
- Limited options for supply voltage (1.8V or 3.0V). -
Similar parts: 430483 , Click to view
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Datasheet
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Shopping guide
Delivery period:
- - Will ship out in 2-3 days
- - DHL Express: 3-7 business days
- - DHL eCommerce: 12-22 business days
- - FedEx International Priority: 3-7 business days
- - EMS: 10-15 business days
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Shipping option:
DHL, FedEx, EMS, SF Express, and Registered Air MailShipping tracking:
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How to Buy:
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Popular parts of the same kind
- Datasheet: Download NANDC9R4N0AZBA5
- Chipdatas Part: CD93-NANDC9R4N0AZBA5
- Warehouse: China, Hong Kong
- Dispatch: Within 24 hours
- Free Shipping: Yes
- Prority Shipping: Yes, 3-5 days
- Last Updated: 2024/06/03 13:28 +0800
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- Full Refund if you don't receive your order
- Full or Partial Refund , If the item is not as described
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