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DMMT5401-7-F - Brand New Diodes Incorporated Transistors (BJT) - Arrays - Datasheet - Chipdatas

DMMT5401-7-F - Brand New Diodes Incorporated Transistors (BJT) - Arrays

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In Stock: 11706, Ready for Immediate Shipping
Chipdatas Part No.:CD94-DMMT5401-7-F
Manufacturer Part No.:DMMT5401-7-F
Datecode:09+
Package:SOT-26-6
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  • Description

    The DMMT5401-7-F is an electronic component model in the category of transistors (BJT) - arrays. It features epitaxial planar die construction and is complementary to the NPN type DMMT5551. This component is ideal for low power amplification and switching applications. It also offers an intrinsically matched PNP pair with a 2% matched tolerance for hFE, VCE(SAT), and VBE(SAT). The DMMT5401-7-F is lead-free and RoHS compliant, making it a "green" device.

    Specifications and features

    • Epitaxial Planar Die Construction
    • Complementary NPN Type Available (DMMT5551)
    • Ideal for Low Power Amplification and Switching
    • Intrinsically Matched PNP Pair (Note 1)
    • 2% Matched Tolerance, hFE, VCE(SAT), VBE(SAT)
    • Lead Free/RoHS Compliant (Note 4)
    • "Green" Device, Note 5 and 6

    Application Scenarios

    The DMMT5401-7-F can be used in various electronic applications such as low power amplification and switching. Its intrinsic matching of the PNP pair makes it suitable for applications that require precise control over hFE, VCE(SAT), and VBE(SAT) tolerances. The lead-free and RoHS compliant nature of this component also makes it ideal for environmentally conscious projects.

    Comparison

    Advantages:
    1. Epitaxial planar die construction ensures high performance and reliability.
    2. Complementary NPN type available for versatile use in different circuit configurations.
    3. Intrinsic matching of the PNP pair provides accurate control over hFE, VCE(SAT), and VBE(SAT) tolerances.
    4. Lead-free and RoHS compliant, making it environmentally friendly.
    Disadvantages:
    1. Limited to low power amplification and switching applications.
    2. May not be suitable for high power or high voltage applications.

  • Similar parts: 863 , Click to view
    Attributes Value
    Category Transistors (BJT) - Arrays
    Manufacturer Diodes Incorporated
    Product Category Transistors (BJT) - Arrays
    Series DMMT5401
    Packaging Alternate Packaging
    Unit-Weight 0.001058 oz
    Mounting-Style SMD/SMT
    Package-Case SOT-23-6
    Mounting-Type Surface Mount
    Supplier-Device-Package SOT-26
    Configuration Dual
    Power-Max 300mW
    Transistor-Type 2 PNP (Dual) Matched Pair
    Electric current collectors 200mA
    Voltage-Collector-Emitter-Breakdown-Max 150V
    DC-Current-Gain-hFE-Min-Ic-Vce 60 @ 10mA, 5V
    Vce saturation 500mV @ 5mA, 50mA
    Current-Collector-Cutoff-Max 50nA (ICBO)
    Frequency-Transition 300MHz
    Pd-Power-Dissipation 300 mW
    Maximum Operating Temperature + 150 C
    Operating temperature range - 55 C
    Collector-Emitter-Voltage-VCEO-Max - 150 V
    Transistor-Polarity PNP
    Collector-Emitter-Saturation-Voltage - 500 mV
    Collector-Base-Voltage-VCBO - 160 V
    Emitter-Base-Voltage-VEBO - 5 V
    Maximum-DC-Collector-Current - 200 mA
    Gain-Bandwidth-Product-fT 300 MHz
    DC-Collector-Base-Gain-hfe-Min 50 at - 1 mA - 5 V
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Additional Information
  • Datasheet: Download DMMT5401-7-F
  • Chipdatas Part: CD94-DMMT5401-7-F
  • Warehouse: China, Hong Kong
  • Dispatch: Within 24 hours
  • Free Shipping: Yes
  • Prority Shipping: Yes, 3-5 days
  • Last Updated: 2024/07/01 09:52 +0800
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    • Full or Partial Refund , If the item is not as described
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