Description

The MBM29F800TA/BA is a 8M-bit, 5.0 V-only Flash memory organized as 1M bytes of 8 bits each or 512K words of 16 bits each. This device is designed to be programmed in-system with the standard system 5.0 V VCC supply. It does not require 12.0 V VPP for write or erase operations. The devices can also be reprogrammed in standard EPROM programmers. It offers access times of 55 ns and 90 ns, allowing operation of high-speed microprocessors without wait states. To eliminate bus contention, the device has separate chip enable (CE), write enable (WE), and output enable (OE) controls.

Specifications and features

• Single 5.0 V read, write, and erase
• Minimizes system level power requirements
• Compatible with JEDEC-standard commands
• Uses same software commands as E2PROMs
• Compatible with JEDEC-standard world-wide pinouts
• Minimum 100,000 write/erase cycles
• High performance with 55 ns maximum access time
• Sector erase architecture with different sector sizes
• Boot Code Sector Architecture
• Embedded EraseTM Algorithms
• Embedded ProgramTM Algorithms
• Data Polling and Toggle Bit feature for detection of program or erase cycle completion
• Ready/Busy output (RY/BY) for cycle completion detection
• Low Vcc write inhibit ≤ 3.2 V
• Erase Suspend/Resume
• Hardware RESET pin
• Sector protection and temporary sector unprotection

Application Scenarios

The MBM29F800TA/BA can be used in various applications that require 8M-bit Flash memory. It is especially suitable for high-speed microprocessors and systems that need low power consumption. The device's sector erase architecture and embedded algorithms make it versatile for different programming and erasing requirements.

Comparison

• Minimizes system level power requirements
• High performance with fast access time
• Can be reprogrammed in standard EPROM programmers
• Compatible with JEDEC-standard commands and pinouts

• Requires separate chip enable, write enable, and output enable controls
• No mention of specific operating temperature range