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HDTMOS E-FET™ Power Field Effect Transistor
DPAK for Surface Mount
N-Channel Enhancement-Mode Silicon Gate**This advanced HDTMOS power FET is designed to withstand highenergy in
the avalancheand commutation modes. This new energy efficient design also offers a drain–to–source diode with a fast recovery time. Designed for low voltage, high speed switching applicationsin power supplies, converters and PWM motor controls,these devices are particularlywell suited for bridge circuits wherediode speed and commutating safe operating areas are criticaland offer additional safety margin against unexpected voltage transients.**
• Avalanche Energy Specified
• Source–to–Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
• Diode is Characterized for Use in Bridge Circuits
• IDSSand VDS(on)Specified at Elevated Temperature
• Surface Mount Package Available in 16 mm, 13–inch/2500 Unit Tape & Reel, Add T4 Suffix to Part Number -
Similar parts: 430483 , Click to view
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Datasheet
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Shopping guide
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Popular parts of the same kind
- Datasheet: Download 20N06HL
- Chipdatas Part: CD93-20N06HL
- Warehouse: China, Hong Kong
- Dispatch: Within 24 hours
- Free Shipping: Yes
- Prority Shipping: Yes, 3-5 days
- Last Updated: 2024/06/13 19:49 +0800
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- Full Refund if you don't receive your order
- Full or Partial Refund , If the item is not as described
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