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Description
The Toshiba TLP118 is an electronic component model in the IC Chips product category. It is a GaAℓAs infrared light emitting diode with integrated high-gain, high-speed photodetectors. The TLP118 is housed in the SO6 package and has an open collector type output stage. It also features an internal Faraday shield for guaranteed common-mode transient immunity of ±15 kV/μs. The TLP118 operates at high ambient temperatures up to 125°C.
Specifications and features
Package: SO6 pin
Guaranteed performance over: -40 to 125°C
Power supply voltage: 4.5 to 5.5 V
Input threshold current: IFH = 5.0 mA (max)
Propagation delay time tpHL/tpLH: 60 ns (max)
Common-mode transient immunity: ±15 kV/μs (min)
Isolation voltage: 3750 Vrms (min)
UL approved: UL1577, File No.E67349
cUL approved: CSA Component Acceptance Service No. 5A, File No.E67349Application Scenarios
The Toshiba TLP118 is commonly used in PDP (Plasma Display Panel) applications, such as in factory automation for interfacing with measuring and control instruments. It is designed to operate at high ambient temperatures up to 125°C.
Comparison
Advantages- GaAℓAs infrared light emitting diodes for efficient and reliable operation
- Integrated high-gain, high-speed photodetectors for accurate detection
- Open collector type output stage for flexibility in circuit design
- Internal Faraday shield for guaranteed common-mode transient immunity
- Wide operating temperature rangeDisadvantages- Requires power supply voltage of 4.5 to 5.5 V
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Datasheet
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Shopping guide
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Popular parts of the same kind
- Datasheet: Download TLP118(TPL.E
- Chipdatas Part: CD88-TLP118(TPL.E
- Warehouse: China, Hong Kong
- Dispatch: Within 24 hours
- Free Shipping: Yes
- Prority Shipping: Yes, 3-5 days
- Last Updated: 2024/06/03 05:42 +0800
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