Brief Description

This M5M442256AL-8 is a family of high-performance CMOS dynamic RAMs, designed for memory systems that require high speed, low power dissipation, and cost-effectiveness. It features a double-layer metalization process technology and a single-transistor dynamic storage stacked capacitor cell, resulting in high circuit density at reduced costs. With multiplexed address inputs, it allows for a reduction in pins and an increase in system densities. The device has 2CAS and 1W terminals and a refresh cycle of 512 cycles every 8.2ms.

Specifications and Features

• Product Category: IC Chips
• Standard 40-pin SOJ, 44-pin TSOP (II)
• Single 5V±10% supply
• Low stand-by power dissipation
• CMOS Input level: 5.5mW (Max)
• Operating power dissipation:
  • M5M44260Cxx-5, -5S: 688mW (Max)
  • M5M44260Cxx-6, -6S: 605mW (Max)
  • M5M44260Cxx-7, -7S: 523mW (Max)
• Self refresh capability
  • Self refresh current: 150µA (Max)
• Extended refresh capability
  • Extended refresh current: 150µA (Max)
• Fast-page mode (512-column random access), Read-modify-write, RAS-only refresh, CAS before RAS refresh, Hidden refresh capabilities
• Early-write mode, LCAS / UCAS and OE to control output buffer impedance
• 512 refresh cycles every 8.2ms (A0~A8)
• 512 refresh cycles every 128ms (A0~A8)
• Byte or word control for Read/Write operation (2CAS, 1W type)

Application Scenarios

This M5M442256AL-8 is commonly used in microcomputer memory and refresh memory for CRT.

Comparison

• High performance CMOS process
• High circuit density at reduced costs
• Multiplexed address inputs for pin reduction
• Low power dissipation
• Self refresh capability for battery back-up application

• Refresh cycle of 512 cycles every 8.2ms