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HBDM60V600W-7 - Brand New Diodes Incorporated Transistors (BJT) - Arrays - Datasheet - Chipdatas
HBDM60V600W-7
HBDM60V600W-7 thumb pictures

HBDM60V600W-7 - Brand New Diodes Incorporated Transistors (BJT) - Arrays

In Stock:1 ,Ready for Immediate Shipping
New RoSH Lead free
In Stock: 1, Ready for Immediate Shipping
Brand:Diodes Incorporated
Category:Transistors (BJT) - Arrays
Chipdatas Part No.:CD92-HBDM60V600W-7
Manufacturer Part No.:HBDM60V600W-7
Datecode:09+
Package:6-TSSOP, SC-88, SOT-363
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  • Features

    • Epitaxial Planar Die Construction
    • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
    • Halogen, Antimony and Beryllium Free. “Green” Device
    (Note 3)
    • For automotive applications requiring specific change
    control (i.e. parts qualified to AEC-Q100/101/200, PPAP
    capable, and manufactured in IATF 16949 certified facilities),
    please contact us or your local Diodes representative.
    https://www.diodes.com/quality/product-definitions/

  • Similar parts: 863 , Click to view
    Attributes Value
    Category Transistors (BJT) - Arrays
    Manufacturer Diodes Incorporated
    Product Category Transistors (BJT) - Arrays
    Series HBDM60
    Packaging Alternate Packaging
    Unit-Weight 0.000212 oz
    Mounting-Style SMD/SMT
    Package-Case 6-TSSOP, SC-88, SOT-363
    Mounting-Type Surface Mount
    Supplier-Device-Package SOT-363
    Configuration Dual
    Power-Max 200mW
    Transistor-Type NPN, PNP
    Electric current collectors 500mA, 600mA
    Voltage-Collector-Emitter-Breakdown-Max 65V, 60V
    DC-Current-Gain-hFE-Min-Ic-Vce 100 @ 100mA, 1V / 100 @ 150mA, 10V
    Vce saturation 400mV @ 10mA, 100mA / 500mV @ 50mA, 500mA
    Current-Collector-Cutoff-Max 100nA
    Frequency-Transition 100MHz
    Pd-Power-Dissipation 200 mW
    Maximum Operating Temperature + 150 C
    Operating temperature range - 55 C
    Collector-Emitter-Voltage-VCEO-Max - 60 V + 65 V
    Transistor-Polarity NPN PNP
    Collector-Emitter-Saturation-Voltage - 0.5 V
    Collector-Base-Voltage-VCBO - 60 V + 80 V
    Emitter-Base-Voltage-VEBO - 5.5 V 6 V
    Maximum-DC-Collector-Current 0.5 A at NPN 0.6 A at PNP
    Gain-Bandwidth-Product-fT 100 MHz
    Continuous-Collector-Current - 600 mA 500 mA
    DC-Collector-Base-Gain-hfe-Min 50
    DC-Current-Gain-hFE-Max 300
  • Datasheet
    Not found or temporary maintenance
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  • Shopping guide

    Warranty:
    • - 30-day money-back return policy,
    • - 90-day warranty against any manufacturing defects. View more
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Contact us
Additional Information
  • Datasheet: Download HBDM60V600W-7
  • Chipdatas Part: CD92-HBDM60V600W-7
  • Warehouse: China, Hong Kong
  • Dispatch: Within 24 hours
  • Free Shipping: Yes
  • Prority Shipping: Yes, 3-5 days
  • Last Updated: 2024/06/13 09:18 +0800
Refund
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    • Full Refund if you don't receive your order
    • Full or Partial Refund , If the item is not as described
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