Description

The ENFPA7H4F27 is a 512Kb (256K X 2) CMOS non-volatile serial Flash Memory. This device fully conforms to the SPI 4-wire protocol, and allows for data transfer between the SPI microcontroller and the Serial FLASH memory. The memory can be programmed from 1 up to 256 bytes at a time, and is organized into two sectors. Each sector contains 128 pages, with each page being 256 bytes wide. The memory can be erased in various ways, including page erase, sector erase, and bulk erase.

Specifications and features

Key features of the ENFPA7H4F27 include:

• Saifun NROM™ Flash Cell
• Serial Peripheral Interface (SPI) Compatible, Supports SPI Modes 0 and 3
• Page Program Operation: 256 pages (256 Bytes/Page), Single Page Rewrite Cycle in 10ms Typical
• Page Erase (256 bytes) in 3 ms
• Sector Erase (256 Kb) in 0.3 s
• Bulk Erase (512 Kb)
• Single Supply Voltage: 2.7 V to 3.6 V
• 25MHz Clock Rate
• Block Write Protection: Protect Quarter, Half or Entire Array
• Write Protect Pin and Write Disable Instructions for Data Protection
• 100,000 Erase Cycles (Minimum)
• More than 20-Year Data Retention
• Low-power Standby Current (less than 1µA)
• 8-SOIC Narrow Package
• MLF Leadless Package
• Temperature Range: Industrial: -40°C to +85°C, Commercial: 0°C to +70°C

Application Scenarios

The ENFPA7H4F27 is commonly used in electronic devices that require non-volatile memory for data storage. It is suitable for applications in various industries, including automotive, consumer electronics, industrial automation, and more.

Comparison

- Saifun NROM™ Flash Cell technology for reliable data storage

- Supports SPI modes 0 and 3, providing flexibility in data transfer

- Multiple erase options for efficient memory management

- Wide temperature range for versatile application scenarios

- Limited memory capacity of 512Kb