TL555QDR - Brand New Texas Instruments IC Chips
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Description
The TL555QDR is a synchronous high data rate Dynamic RAM with a capacity of 67,108,864 bits. It is organized as 4 x 524,288 words by 32 bits, and it is fabricated using SAMSUNG's high performance CMOS technology. This electronic component is designed to provide precise cycle control and allow I/O transactions on every clock cycle. It has a range of operating frequencies, programmable burst length, and programmable latencies, making it suitable for various high bandwidth, high performance memory system applications.
Specifications and features
- JEDEC standard 3.3V power supply
- LVTTL compatible with multiplexed address
- Four banks operation
- MRS cycle with address key programs
- CAS latency (2 & 3)
- Burst length (1, 2, 4, 8 & Full page)
- Burst type (Sequential & Interleave)
- All inputs are sampled at the positive going edge of the system clock.
- Burst read single-bit write operation
- DQM for masking
- Auto & self refresh
- 64ms refresh period(4K Cycle)
Application Scenarios
The TL555QDR is commonly used in high bandwidth, high performance memory system applications. It can be used in various electronic devices such as computers, servers, networking equipment, and gaming consoles.
Comparison
Advantages- Precise cycle control
- Possibility of I/O transactions on every clock cycle
- Programmable burst length and latencies
- Suitable for a variety of high bandwidth, high performance memory system applications
DisadvantagesNo specific disadvantages have been identified for the TL555QDR model.
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Similar parts: 430483 , Click to view
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Datasheet
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Popular parts of the same kind
- Datasheet: Download TL555QDR
- Chipdatas Part: CD94-TL555QDR
- Warehouse: China, Hong Kong
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- Last Updated: 2024/06/14 03:54 +0800
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